A roll-to-roll microwave plasma chemical vapor deposition process for the production of 294mm width graphene films at low temperature

Yamada, Takatoshi; Ishihara, Masatou; Kim, Jae-Ho; Hasegawa, Masataka; Iijima, Sumio

doi:10.1016/j.carbon.2012.02.020

Cited by 169 publications

(121 citation statements)

References 16 publications

Supporting

Mentioning

120

Contrasting

Unclassified

Order By: Relevance

“…Yamada et al reported a R2R microwave plasma CVD for the continuous deposition of graphene films. [104] After being transferred onto PET substrates the graphene shows a good transmittance of 95%, however, the sheet resistance of ≈10 5 Ω sq -1 is too high to be used as TCFs in electronic devices. Kobayashi et al reported a method of selective Joule heating on a copper foil to achieve continuous CVD synthesis of graphene and a direct R2R transfer process.…”

Section: Graphene Transparent Conductive Filmsmentioning

confidence: 99%

“…Scientists have shown the possibility of scale-up for graphene TCFs in industrial development, not only in R2R transfer [27,102] but also in R2R CVD synthesis. [103][104][105] Several transfer methods that do not involve metal etching are promising for the environmentally friendly and economical transfer of graphene, such as electro-chemical bubbling [108] and water-assisted delamination. [109,110] On the other hand, TCFs based on multi-wall CNT TCFs have been commercialized for use in touch screens in cell phones; [61] however, their optoelectrical performance is not as good as that of single-wall CNTs.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

“…The graphene films were first transferred from copper foils to a thermal release tape by removing the Cu with an etchant, and the graphene films were then detached from the tape and released to the PET substrate by thermal treatment. [27,102] Along with the R2R transfer process, R2R CVD synthesis is highly desired for the efficient production of graphene, [103,104] the main challenge being the integration of a high temperature CVD reactor with a R2R system. Yamada et al reported a R2R microwave plasma CVD for the continuous deposition of graphene films.…”

Section: Graphene Transparent Conductive Filmsmentioning

confidence: 99%

See 2 more Smart Citations

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

View full text Add to dashboard Cite

silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

show abstract

Section: Graphene Transparent Conductive Filmsmentioning

confidence: 99%

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

Section: Graphene Transparent Conductive Filmsmentioning

confidence: 99%

See 1 more Smart Citation

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…By combining low temperature surface-wave plasma CVD with roll-to-roll transfer of copper foil substrate, highthroughput synthesis of graphene with winding speed of 5-10 mm/s was demonstrated by the AIST group. [9][10] The problem of plasma CVD of graphene is the crystal size (domain size) of 10 nm or smaller, which inhibits electrical conductivity. By the large growth rate and high nucleation density of plasma CVD, graphene growth in the two-dimensional direction is prevented, which causes stacking of small flakes in multiple layers and deterioration of the controllability of the number of layers.…”

Section: -Toward a High Throughput Process-mentioning

confidence: 99%

High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

Hasegawa

Tsugawa²,

Kato³

et al. 2016

Synthesiology English edition

Self Cite

View full text Add to dashboard Cite

attempt to develop high throughput plasma-enhanced CVD for high quality graphene.[8]- [16] 2 Preparation of a substrate for graphene synthesis and suppression of impurity incorporation.In the case of CVD of graphene using a copper foil substrate, surface cleaning technique of copper foil before CVD is especially important. Also in the case of plasma-assisted CVD (plasma CVD), it is necessary to prevent contamination such as impurities released from the reaction chamber by plasma exposure, particularly silicon, which originate from the quartz of antenna units for exciting plasma.Commercially available copper foil surfaces are subjected to anticorrosive treatment in order to prevent oxidation. Moreover, even foil with anticorrosive treatment has a surface that is still covered with a thin copper oxide layer. For high-quality graphene synthesis, it is necessary to remove these copper oxide and anticorrosive treatment carefully. In thermal CVD of graphene, electrolytic cleaning and successive high-temperature treatment at about 1000 °C of the copper foil substrate in the reaction chamber are effective for removing copper oxide and the anticorrosive treatment layer. Furthermore, in order to flatten the copper foil surface, chemical polishing (CMP) before electrolytic cleaning and annealing treatment is effective.[17] [18] On the other hand, electrolytic cleaning is a wet process and thus there is a possibility of recontamination before CVD. Therefore, cleaning methods consistent with CVD are desirable. IntroductionGraphene [1] is a single atomic sheet in which carbon atoms are arranged in a hexagonal honeycomb lattice. Graphene has a very unique band structure (zero bandgap, linear dispersion), and thereby it shows brilliant electronic and optical characteristics such as extremely high carrier mobility and light absorption which does not depend on wavelength. (2.3 % absorption per layer.) Moreover graphene has the property of flexibility which indium tin oxide (ITO) [2] does not possess, and an attempt has been made to use a few layers of graphene(FLG) as transparent electrodes in such devices as flexible organic light-emitting diode (OLED), solar batteries, and displays.For transparent electrode application of graphene, it is necessary to establish production technology of high quality and high throughput for large area graphene. Among the various methods of graphene production such as mechanical exfoliation of bulk graphite, [1][3] exfoliation of graphene oxide in liquid phase, [4] thermal decomposition of SiC, [5] etc., chemical vapor deposition (CVD) on catalytic transition metal surfaces, in particular on a copper surface, has great promise as a production method for transparent electrode application. Recently, high conductivity graphene has been synthesized on copper substrates by energetic development of the thermal CVD method.[6] [7] On the other hand, since throughput of the thermal CVD method is insufficient, synthesis time needs to be significantly shortened for transparent electrode application. In this p...

show abstract

“…Since plasma can damage the growing material, one needs to design the equipment in order to avoid the damaging effects of the plasma. Some approaches to graphene synthesis using MW (microwave) plasma CVD [7,8] and SW (surface wave) assisted MW plasma CVD [5,9] have been reported so far. However, the reports show very intensive D peak signals which ultimately lead to the poor quality film for its device applications.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Plasma CVD Grown Graphene by Microwave Surface-Wave Plasma CVD Using Camphor Precursor

Uchida¹,

Aryal²,

Adhikari³

2016

JPSA

View full text Add to dashboard Cite

Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD (chemical vapor deposition) system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.

show abstract

A roll-to-roll microwave plasma chemical vapor deposition process for the production of 294mm width graphene films at low temperature

Cited by 169 publications

References 16 publications

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

Low Temperature Plasma CVD Grown Graphene by Microwave Surface-Wave Plasma CVD Using Camphor Precursor

Contact Info

Product

Resources

About