A role for ion implantation in quantum computing

Jamieson, David N.; Prawer, S.; Andrienko, I.; Brett, D. A.; Millar, Victoria

doi:10.1016/s0168-583x(00)00680-7

Cited by 21 publications

(25 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 He irradiation was carried out, at normal incidence, using the University of Melbourne 5U Pelletron. 4 He irradiation was carried out, at normal incidence, using the University of Melbourne 5U Pelletron.…”

Section: Pmma Film Irradiation and Processingmentioning

confidence: 99%

“…The preliminary experiments presented here make use of 4 He ions, of energy 4.0 MeV; for reasons that we shall address, these afford an accurate model for the use of low energy 31 P ions. The preliminary experiments presented here make use of 4 He ions, of energy 4.0 MeV; for reasons that we shall address, these afford an accurate model for the use of low energy 31 P ions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

<title>Nanoscale fabrication using single-ion impacts</title>

Millar

Pakes

Cimmino

et al. 2001

BioMEMS and Smart Nanostructures

Self Cite

View full text Add to dashboard Cite

We describe a novel technique for the fabrication of nanoscale structures, based on the development of localized chemical modification caused in a PMMA resist by the implantation of single ions. The implantation of 4 MeV He ions through a thin layer of PMMA into an underlying silicon substrate causes latent damage in the resist. On development of the resist we demonstrate the formation within the PMMA layer of clearly defined etched holes, of typical diameter 30 nm, observed using an atomic force microscope employing a carbon nanotube SPM probe in intermittent-contact mode.This technique has significant potential applications. Used purely to register the passage of an ion, it may be a useful verification of the impact sites in an ion-beam modification process operating at the single-ion level. Furthermore, making use of the hole in the PMMA layer to perform subsequent fabrication steps, it may be applied to the fabrication of self-aligned structures in which surface features are fabricated directly above regions of an underlying substrate that are locally doped by the implanted ion. Our primary interest in single-ion resists relates to the development of a solidstate quantum computer based on an array of 31 P atoms (which act as qubits) embedded with nanoscale precision in a silicon matrix 1 . One proposal for the fabrication of such an array is by phosphorous-ion implantation. A single-ion resist would permit an accurate verification of 31 P implantation sites. Subsequent metalisation of the latent damage may allow the fabrication of self-aligned metal gates above buried phosphorous atoms.1. B.E. Kane, "A silicon-based nuclear spin quantum computer," Nature 393, pp. 133-137, 1998.

show abstract

Section: Pmma Film Irradiation and Processingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

<title>Nanoscale fabrication using single-ion impacts</title>

Millar

Pakes

Cimmino

et al. 2001

BioMEMS and Smart Nanostructures

Self Cite

View full text Add to dashboard Cite

show abstract

“…The high-energetic ion implantation are used also for the formation of disrequlated quantum walls (DQW) [1 1], used as optical waveguides. Thin resist layers of PMMA show considerable promise for the registration of the passage of single ions and are suitable for construction a quantum computer in silicon [12].…”

Section: Introductionmentioning

confidence: 99%

<title>PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry</title>

et al. 2004

View full text Add to dashboard Cite

We have applied spectroscopic ellipsometry with binary polarization modulation to study the refractive index n(X) and extinction coefficient k(X) spectra of as-deposited and irradiated with nitrogen ions polymethylmethacrylate (PMMA) and polystyrene (PS) films in 300-1030 nm range. The results of performed investigation confirmed the possibility and estimate restrictions of the ion implantation for local change the refractive index of polymeric materials.

show abstract

“…Several techniques for single ion implantation are being developed. A passive technique has been proposed in which random ion impacts are registered by thin resists and post implantation processing [6]. An active technique has been developed that relies on the secondary electrons emitted from the surface following a single ion impact [7].…”

Section: Introductionmentioning

confidence: 99%

Single ion implantation in the quantum computer construction project

Jamieson

Splatt

Pakes

et al. 2002

Nano- And Microtechnology: Materials, Processes, Packaging, and Systems

View full text Add to dashboard Cite

Figure 1: (left) Kane quantum computer [1] schematic showing a 2 donor device and associated A-and J-gate control electrodes with Single Electron Transistors (SET) for readout. (right) SEM image of prototype including aluminium detector electrodes for registration of single ion impact signals. Note that the J gate width in this device is only 12 nm. ABSTRACTThe construction of micro-and nano-scale electronic devices that exploit the properties of single atoms have been proposed. A very promising device is a silicon based solid state quantum computer based on an array of single 31 P atoms as qubits in a pure 28 Si substrate. Operation of the device requires independent control, coupling and readout of the state of individual qubits. We have developed a construction strategy for a few qubit device based on ion implantation of the qubits into prefabricated cells. An ion energy of less than 20 keV is necessary to ensure the ion range is at the required depth in the substrate which is of the order of 20 nm. Single ion impacts are registered by the electrical transient induced in an external circuit. Electron Beam Lithography fabricated cells, containing electrodes of the required nanometre scale, have been implanted with 14 keV 31 P ions and the pulse height spectrum of single ion impacts has been successfully recorded. Discrimination on the pulse height allows rejection of ions that suffer unacceptable straggling. This opens the way to the rapid construction of a two qubit device in the first instance that will test many of the essential mechanisms of a revolutionary solid state quantum computer.

show abstract

A role for ion implantation in quantum computing

Cited by 21 publications

References 12 publications

<title>Nanoscale fabrication using single-ion impacts</title>

<title>Nanoscale fabrication using single-ion impacts</title>

<title>PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry</title>

Single ion implantation in the quantum computer construction project

Contact Info

Product

Resources

About