The switching performance of vertical geometry NiO/β-Ga2O3 rectifiers with a reverse breakdown voltage of 1.76 kV (0.1 cm diameter, 7.85 x10-3 cm2 area) and an absolute forward current of 1.9 A fabricated on 20 µm thick epitaxial β-Ga2O3 drift layers and a double layer of NiO to optimize breakdown and contact resistance was measured with an inductive load test circuit. The Baliga figure-of-merit of the devices was 175 MW.cm-2, with on-state resistance of 17.8 mΩ.cm2. The recovery characteristics for these rectifiers switching from forward current of 1 A to reverse off-state voltage of -550 V showed a recovery time (trr) of 101 ns, with a peak current value of 1.4A for switching from 640V. There was no significant dependence of trr on switching voltage or forward current.