A review on electronic and optical properties of silicon nanowire and its different growth techniques

Abstract

Electronic and optical properties of Silicon Nanowire (SiNW) obtained from theoretical studies and experimental approaches have been reviewed. The diameter dependency of bandgap and effective mass of SiNW for various terminations have been presented. Optical absorption of SiNW and nanocone has been compared for different angle of incidences. SiNW shows greater absorption with large range of wavelength and higher range of angle of incidence. Reflectance of SiNW is less than 5% over majority of the spectrum from the UV to near IR region. Thereafter, a brief description of the different growth techniques of SiNW is given. The advantages and disadvantages of the different catalyst materials for SiNW growth are discussed at length. Furthermore, three thermodynamic aspects of SiNW growth via the vapor–liquid–solid mechanism are presented and discussed.

Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

“…The robust behaviors in silicon nanowires (SiNWs) material properties, such as high mechanical strength, 1 stability in thermal, 2 chemical 3 and biological 4 environments, unique thermoelectric performances, 5 enriched optical and electronic 6,7 behaviors pave the way for research as well as industrial pursuits. The unique sp 3 -bonded crystal structure and the low work function of SiNWs show it to be a potential candidate to be employed as a cold cathode material for¯eld emission device applications.…”

Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching

“…Several architectures for ultra-scaled devices targeting classical and quantum information processing, chemical sensing, and energy harvesting and production rely on silicon and germanium nanowires (SiNWs, GeNWs). [1][2][3][4][5][6][7] Despite the efforts in the preparation and characterization of these nanostructures, some fundamental issues remain relatively unexplored. In particular the investigation of defects in 1D nanostructures at the interface between the semiconductor and its oxide or other semiconductors or oxides in core-shell structures represents an important challenge, as the NW diameter reduces and the surface-to-volume ratio increases.…”

Fabrication and Characterization of Solar Cells Based on Silicon Nanowire Homojunctions

“…The samples show very low reflection (~0.6%) over thein whole spectralum range compared withby Si solid films [21] However, low reflectance of light means increasing light that absorptionbers by the solar cell that could lead to an increase in the conversion efficiency of the device. Huang et al notes…”