A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

Bao, Shuyu; Wang, Yue; Lina, Khaw; Zhang, Li; Wang, Bing; Sasangka, Wardhana Aji; Lee, Kenneth Eng Kian; Chua, Soo Jin; Michel, Jürgen; Fitzgerald, Eugene A.; Tan, Chuan Seng; Lee, Kwang Hong

doi:10.1088/1674-4926/42/2/023106

Cited by 40 publications

(23 citation statements)

References 67 publications

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“…WB interfacing the Si platform with III-V semiconductors [79] has been successfully used to integrate singlephoton sources (SPS) in PICs. An In(Ga)As QD-hosting layer was bonded onto a Si 3 N 4 substrate.…”

Section: Compatible Platformsmentioning

confidence: 99%

Scalable integration of quantum emitters into photonic integrated circuits

Sartison

Ibarra

Caltzidis

et al. 2022

Mater. Quantum. Technol.

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Scaling up photonic quantum devices to reach complexities allowing to solve real-world problems requires a platform enabling scalable integration of solid-state quantum emitter with a high yield. Their nanometer-size together with their excellent quantum optical properties make them the ideal candidates for on-chip photonic quantum technologies. However, robust, scalable integration remains elusive. Here, we discuss the state-of-the-art methods to integrate quantum emitters into photonic integrated circuits, emphasizing the pros and cons of the integration methods applicable for speciﬁc quantum emitters. Based on our thorough comparison we give our perspective on the most promising approaches and how to overcome the remaining challenges.

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Section: Compatible Platformsmentioning

confidence: 99%

Scalable integration of quantum emitters into photonic integrated circuits

Sartison

Ibarra

Caltzidis

et al. 2022

Mater. Quantum. Technol.

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show abstract

“…Among numerous semiconductors, III-V compound materials, such as InP, GaAs, and GaN, receive widespread attention due to the excellent electrical properties and high-electron-mobility in transistors [ 79 , 80 , 81 , 82 ]. Compared with Si, most III-V compounds have a direct bandgap, making them can be used as light-emitting diodes (LEDs) and lasers [ 83 , 84 , 85 , 86 , 87 ]. The combination of III-V materials with the Si-CMOS platform can be used as a hybrid solution for the on-chip integration of Si-based photonics.…”

Section: Heterogeneous Bonding For Iii-v and Wide Bandgap Semiconductor Thin-film Transfer Onto Si Substratementioning

confidence: 99%

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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“…The co-integration of III-V/Si lasers and optical amplifiers presents several challenging points that need to be carefully evaluated. First, we have designed both devices using the same III-V epitaxial material to make them compatible with the heterogeneous wafer bonding technique, which is the most mature technology for the III-V/SOI platform up to now [32]. Nevertheless, this choice imposes a trade-off on the number of MQWs in the active region since the optimum III-V stack may differ for the laser and the SOA.…”

Section: Device Design and Structurementioning

confidence: 99%

Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

et al. 2021

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

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A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

Cited by 40 publications

References 67 publications

Scalable integration of quantum emitters into photonic integrated circuits

Scalable integration of quantum emitters into photonic integrated circuits

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

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