A review of III–V nanowire infrared photodetectors and sensors

LaPierre, Ray; Robson, Mitchell; Azizur-Rahman, Khalifa M.; Kuyanov, P

doi:10.1088/1361-6463/aa5ab3

Cited by 193 publications

(178 citation statements)

References 81 publications

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“…In recent years, semiconductor nanowires (NWs) have received tremendous attention because of their enormous potential applications in nanoscale electronics and optoelectronics devices such as photodetectors (PDs), single electron transistors, single photon detectors, tunneling diodes, and nanolasers . Reduced dimensionality, large surface‐to‐volume ratio, and strong light–matter interaction make the NWs a solid candidate for optoelectronic applications .…”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

“…Photodetectors fabricated using semiconductor NWs have been a source of motivation for researchers due to their high quantum efficiency and responsivity . Among all semiconducting NWs, III–V semiconductor NWs are promising candidates for photodetectors because of their high absorption coefficient and wide tunable bandgaps . Photodetectors based on III–V semiconductor NWs have been fabricated in different configurations such as core–shell nanostructures, alloys, and heterostructures .…”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

“…The optical gain can be expressed by the following equation

G = R * h c / λ e

where h is the plank constant, e is the electronic charge, c is the speed of light, and λ is the wavelength of irradiated light. Another figure‐of‐merit of photodetector is its detectivity ( D *) which portrays the proficiency to the smallest detectable signal and can be defined as

D * = {(A normalΔ f)}^{1 / 2} / (N E P)

where Δ f is the electrical bandwidth in Hz and NEP is the noise equivalent power. In case of small noise from dark current, the specific detectivity can also be written as

D * = R {(A normal/ 2 e I_{normaldark})}^{1 / 2}

where I dark is the current before illumination.…”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

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High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan

Zhang

Tang

et al. 2018

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Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and nonradiative recombination centers. Here, self-catalyzed p-type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photoresponsivity of 1.45 × 10 A W and excellent specific detectivity (D*) up to 1.48 × 10 Jones for a low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.

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Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

“…The optical gain can be expressed by the following equation

G = R * h c / λ e

D * = {(A normalΔ f)}^{1 / 2} / (N E P)

where Δ f is the electrical bandwidth in Hz and NEP is the noise equivalent power. In case of small noise from dark current, the specific detectivity can also be written as

D * = R {(A normal/ 2 e I_{normaldark})}^{1 / 2}

where I dark is the current before illumination.…”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

See 1 more Smart Citation

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan

Zhang

Tang

et al. 2018

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“…Traditionally, groups III-V materials have been used to fabricate infrared detectors due to their high absorption efficiency and high carrier drift velocity [3].…”

Section: Introductionmentioning

confidence: 99%

Model Development of p-i-n Germanium Devices for Infrared Detection

Philippi¹,

Zeller²,

Dhar³

et al. 2018

OPJ

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Germanium offers many benefits over groups III-V materials when used for infrared detection. Most importantly, germanium is compatible with Complementary Metal Oxide Semiconductor (CMOS) manufacturing which allows for a low-cost, high-throughput device, and it does not require cooling, which many III-V devices do. With the deposition of germanium directly on silicon, there will be a thermally induced strain due to the difference in thermal expansion coefficients between the two materials. When a biaxial tensile strain is present, the direct bandgap of germanium is lowered to ~0.77 eV and is capable of absorbing longer wavelengths. We have used a two-step deposition process to create a strained germanium film in order to fabricate a photodetector device. Our device has a dark current of 1.35 nA and a photocurrent of 22.5 nA at 1570 nm wavelength. Next, we developed a model in order to compare theoretical results with experimental results. The results indicate that the model is in close agreement with our measured data, and we are therefore able to use it to model future devices.

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“…To date, the growth of GaSb-based semiconductors has mainly been dependent on liquid phase epitaxy (LPE), metal-organic chemical vapor deposition (MOCVD), and molecular beam epitaxy (MBE). MBE is preferred as a high-efficiency epitaxial growth technique that is used to manufacture light-emitting diodes, lasers, and detectors for MIR waveband operation by varying the material components to adjust their energy bands [1,5,7]. By tuning of the growth parameters, a variety of complex quantum structures with high surface and interface quality can be realized.…”

Section: Introductionmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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A review of III–V nanowire infrared photodetectors and sensors

Cited by 193 publications

References 81 publications

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Model Development of p-i-n Germanium Devices for Infrared Detection

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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