A review of hydrodynamic and energy-transport models for semiconductor device simulation

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

“…Choosing the model of electron transporting, we took account balance between speed of calculations and sufficient accuracy. Nowadays it is clear that calculations of the drift-diffusion model cannot satisfy the demands of practice in the calculations of submicron transistors [10][11][12][13][14][15][16]. Accounting of the results by the Monte Carlo method in conjunction with the existing hydrodynamic model is the best choice in many cases, in our opinion.…”

“…Studying effect of a heterostructure barrier layer on transistor's static characteristics in an equipment of space application, should consider a potential effect of specific external factors such as intensity of ionizing radiation on conductivity of two-dimensional electron gas and a number of the other GaN heterostructure parameters and investigated field-effect transistor, including the effect of metallization contacts topology [12,20,21].…”

Effect of Alpha Irradiation on Silicon Schottky Diode Detector

“…At higher electric field, as electrons gain higher energy than that of the applied electric field, they emit optical phonons thus mobility decreases, as the scattering increases [12].…”

Accelerating the transient simulation of semiconductor devices using filter-bank transforms

“…As device sizes continue to decrease, nonlocal, hot carrier transport becomes dominant and can no longer be ignored. Therefore, hydrodynamic transport equations which are obtained by taking the first three moments of the Boltzmann Transport Equation (BTE) in conjunction with the Poisson's equation, must be used to study nonstationary transport effects in submicrometer devices [1]. These equations form a set of nonlinear, coupled and timedependent partial differential equations.…”