A review of GaN HEMT broadband power amplifiers

Hamza, K. Husna; Nirmal, D.

doi:10.1016/j.aeue.2019.153040

Cited by 104 publications

(44 citation statements)

References 161 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In this regard, GaN, the thirdgeneration wide-bandgap semiconductor technology, with superior breakdown voltage and electron mobility properties is the promising candidate. Moreover, GaNbased devices also have the inherent benefit of high output resistance along with low parasitic capacitance, which makes them ideal for broadband amplifier design [1,17,18]. Accordingly, we propose a solution that combines reactive/resistive gain equalizing networks in the form of parallel RC and negative feedback technique to realize a cascaded two-stage MMIC PA covering 22-27 GHz based on 0.1 μm GaN high electron mobility transistor (HEMT) process on a 100-μm-thick silicon substrate developed by OMMIC.…”

Section: Introductionmentioning

confidence: 99%

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

Peng

Chen

Zhang

et al. 2021

IEICE Electron. Express

View full text Add to dashboard Cite

This paper presents a K-band two-stage power amplifier (PA) with a compact circuit size of 1.8×0.87 mm 2 . To guarantee broadband high-gain output performance, the optimal impedance domain and power cell are determined through load/source-pull simulation and Kpoint method, respectively. Reactive/resistive matching networks are carefully employed to reduce the equivalent gate capacitance, improve stability and compensate for the device's negative gain roll-off slope. Meanwhile, combining with feedback technique adopted in driver stage, the entire operation bandwidth can be further extended. Under 12 V pulse voltage supply, 37.4% of peak power-added efficiency (PAE) at 26 GHz and 24±0.5 dB of small-signal gain, 30.3-31.6 dBm of saturated output power (P sat ) across 22-27 GHz are obtained as shown in the experimental results.

show abstract

Section: Introductionmentioning

confidence: 99%

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

Peng

Chen

Zhang

et al. 2021

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Achieving high efficiency with high linearity is one of the most challenging task in amplifier design as for biasing class amplifiers increase in linearity will decrease efficiency and vice versa. Class A has highest linearity but lowest efficiency (50 % ) whereas Class C can offer highest efficiency (theoretically maximum of 100 % ) but is most nonlinear 5 . The output power requirement of power amplifier (PA) will depend on the cell size as discussed in Lie et al 6 …”

Section: Introductionmentioning

confidence: 99%

Review of efficiency enhancement techniques and linearization techniques for power amplifier

Singh

Malik

2021

Circuit Theory & Apps

View full text Add to dashboard Cite

Summary Power amplifier is one of the most important module of transceiver design. Linearity and efficiency are the two main areas of improvement in power amplifier design. Fifth generation (5G) mobile communication is one of the most important application of power amplifier, which require power amplifiers that are extremely linear and efficient. In this paper, review of different efficiency enhancement and linearization techniques has been undertaken. Basic architecture, advantages, and challenges of efficiency enhancement techniques—outphasing, Doherty, and envelope tracking—have been discussed. Linearization techniques—feedback, feedforward, and predistortion—have also been discussed in this paper.

show abstract

“…In recent years, gallium nitride (GaN) high-electron mobility transistor (HEMT) due to their high breakdown voltage, high cut-off frequency and low turn on resistance has received special attention in radio frequency (RF) applications (Husna Hamza and Nirmal, 2020;Tsou et al, 2015;Song et al, 2019). Usually a high power density concentrating in the active region and associated with high junction temperature is significantly deteriorated the performance of GaN HEMT and limits their full potential.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation and microchannels parameters optimization for thermal management of GaN HEMT devices

Wang

et al. 2021

HFF

View full text Add to dashboard Cite

Purpose This study aims to satisfy the thermal management of gallium nitride (GaN) high-electron mobility transistor (HEMT) devices, microchannel-cooling is designed and optimized in this work. Design/methodology/approach A numerical simulation is performed to analyze the thermal and flow characteristics of microchannels in combination with computational fluid dynamics (CFD) and multi-objective evolutionary algorithm (MOEA) is used to optimize the microchannels parameters. The design variables include width and number of microchannels, and the optimization objectives are to minimize total thermal resistance and pressure drop under constant volumetric flow rate. Findings In optimization process, a decrease in pressure drop contributes to increase of thermal resistance leading to high junction temperature and vice versa. And the Pareto-optimal front, which is a trade-off curve between optimization objectives, is obtained by MOEA method. Finally, K-means clustering algorithm is carried out on Pareto-optimal front, and three representative points are proposed to verify the accuracy of the model. Originality/value Each design variable on the effect of two objectives and distribution of temperature is researched. The relationship between minimum thermal resistance and pressure drop is provided which can give some fundamental direction for microchannels design in GaN HEMT devices cooling.

show abstract

A review of GaN HEMT broadband power amplifiers

Cited by 104 publications

References 161 publications

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

Review of efficiency enhancement techniques and linearization techniques for power amplifier

Numerical simulation and microchannels parameters optimization for thermal management of GaN HEMT devices

Contact Info

Product

Resources

About