2021
DOI: 10.1108/hff-07-2020-0393
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Numerical simulation and microchannels parameters optimization for thermal management of GaN HEMT devices

Abstract: Purpose This study aims to satisfy the thermal management of gallium nitride (GaN) high-electron mobility transistor (HEMT) devices, microchannel-cooling is designed and optimized in this work. Design/methodology/approach A numerical simulation is performed to analyze the thermal and flow characteristics of microchannels in combination with computational fluid dynamics (CFD) and multi-objective evolutionary algorithm (MOEA) is used to optimize the microchannels parameters. The design variables include width … Show more

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