A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution

Gill, Lee; DasGupta, Sandeepan; Neely, Jason C.; Kaplar, Robert J.; Michaels, Alan J.

doi:10.1109/tpel.2023.3318182

Cited by 7 publications

(1 citation statement)

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“…The worst one is the current collapse (CC) phenomenon, which causes the conduction power consumption to be greater than what the simulations predict [10]. The current collapse leads to an increased on-state resistance, named dynamic R DSON , because the degradation is due to the device switching [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Current Collapse Phenomena Investigation in Automotive-Grade Power GaN Transistors

Basile,

Scrimizzi,

Rizzo

2023

Energies

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This work analyzes the impact of working conditions on the current collapse (CC) phenomenon for an automotive GaN device. For this purpose, some sensing circuits have been compared to find the most suitable for the considered GaN family. Simulations of the testing schematic have been performed, a prototype board has been created, and some measurements have been taken. Finally, the work has investigated the effect on the CC of the input voltage, current level, switching frequency, and duty cycle. The key outcome is that the temperature increment mitigates the CC phenomenon, which implies that the on-state resistance worsening (dynamic/static ratio), which is due to the CC, reduces with increasing temperature. Therefore, the typical increment of the dynamic on-resistance (RDSON) with increasing temperature is ascribable to the increment of the static one with temperature, while it is not at all an exacerbation of the current collapse phenomenon.

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