A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency

Abstract

Electroluminescence can be generated from a wide variety of emissive materials using a simple, generic device structure. In such a device, emissive materials are deposited by various means on a metal oxide semiconductor capacitor structure across which alternating current voltage is applied. However, these devices suffer from low external efficiencies and require the application of high voltages, thus hindering their practical usage and raising questions about the possible efficiencies that can be achieved using alternating current driving schemes in which injection of bipolar charges does not occur simultaneously. We show that appropriately chosen reactive electrical components can be leveraged to generate passive voltage gain across the device, allowing operation at input voltages below 1 V for devices across a range of gate oxide thicknesses. Furthermore, high power efficiencies are observed when using thermally activated delayed fluorescence emitters deposited by a single thermal evaporation step, suggesting that the efficiency of a light-emitting device with simplified structure can be high.

Highly multicolored light-emitting arrays for compressive spectroscopy

“…Characterization of the brightness, efficiency, color, and spectral bandwidth of the electroluminescent devices as compared to the photoluminescence characteristics of the emitting materials is shown in figs. S2 and S3, in supplement to previous reports ( 6 , 13 , 18 ). The frequency response of EL from these devices depends on the resistance and capacitance of the device structure, in addition to properties of the emitting material such as radiative lifetime, of which a few examples are depicted in fig.…”

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

“…Typically, in a standard capacitor, the basic structure is conductor/insulating medium/conductor. [ 39 ] The capacitance is proportional to the dielectric capacity and inverse proportional to the thickness of the insulating medium. Because the Q CPE1 of ZnO/BVO photoanode is much higher than that of Ni‐ZnO/BVO and Rh‐STO/Ni‐ZnO/BVO photoanodes, ZnO quantum layer represents a dielectric layer with a high photo‐carrier transfer energy barrier.…”

AC-driven multicolor electroluminescence from a hybrid WSe2 monolayer/AlGaInP quantum well light-emitting device

“…41 Many studies have detailed construction of AC-driven EL devices with versatile emitting materials, ranging from inorganic thick semiconductors to organic atom-thin semiconductors, and such devices are considered promising alternatives to DC-driven EL devices. [42][43][44][45][46][47][48][49][50] In addition to some scholars investigating AC-driven EL devices based on 2D-TMDCs, other groups have fabricated traditional III-nitride semiconductor-based light-emitting diodes (LEDs) driven by an AC voltage. LEDs have existed since 1962 and have been used in numerous fields, such as displays for electronics, lighting, and optical communication.…”

“…41 Many studies have detailed construction of AC-driven EL devices with versatile emitting materials, ranging from inorganic thick semiconductors to organic atom-thin semiconductors, and such devices are considered promising alternatives to DC-driven EL devices. 42–50…”