A resonant microstructure tunability analysis for an out-of-plane capacitive detection MEMS magnetometer

Design and fabrication of a microelectromechanical system resonator based on two orthogonal silicon beams with integrated mirror for monitoring in-plane magnetic field

“…For a magnetic field of 10,000 mT and I RMS = 30 mA, the mirror has a displacement of 395.8 nm, as shown in Figure 16. Based on the results of the FEM models and using three values I RMS (10,20, and 30 mA), the sensitivities of the sensor are 13.2, 26.4, and 39.6 mm T -1 , respectively. On the other hand, the sensor sensitivities Thus, the performance of the sensor will be safe for magnetic field less than 10,000 mT.…”

“…19,300 kg m -3 Thermal expansion coefficient 2.5 3 10 -6 K - 1 14.2 3 10 -6 K -1 FEM: finite element method. 17 Optical 2D sensing 13 mV mT -1 0.634 116 at P atm 3000 3 3000 Herrera-May et al 13 Piezoresistive 1D sensing 230 mV T -1 100.7 419.6 at P atm 472 3 300 Kumar et al 12 Piezoresistive 1D sensing 2.107 mV T -1 400 1.14 3 10 6 at P atm 800 3 800 Mehdizadeh et al 2 Piezoresistive 1D sensing 262 mV nT -1 2300 16,900 at P atm 100 3 100 Kyynäräinen et al 15 Capacitive 3D sensing b b 30,000 at 0.6 Pa 500 3 500 Li et al 14 Capacitive 3D sensing 9.28 pF T -1 49.1 12,700 at P atm 1800 3 1800 Said et al 10 Capacitive 1D sensing -46.6 fF T -1 mA 18.2 b 1969 3 62.5 Park et al 7 Capacitive 1D sensing 0.955 V mT -1 182 13,285 at 5.5 Pa 154 3 60 Li et al 4 Capacitive 1D sensing 6687 ppm mA -1 mT -1 21.9 540 at P atm 1200 3 680 Langfelder et al 3 Capacitive 1D sensing 0.8 aF mA -1 mT -1 28.3 327.9 at P atm 868 3 89 Wu et al 20 Capacitive 1D sensing 272 mV mT -1 1.38 2530.1 at 10 Pa 3000 3 2000 Liu et al 21 Electromagnetic induction 1D sensing 3.5 mV 20, and 30 mA), the sensor reached analytical sensitivities of 15.4, 30.7, and 46.1 mm T -1 , respectively. The sensor registered an experimental resonant frequency of 53 kHz.…”

“…[3][4][5][6] Generally, they operate using the principle of Lorentz force or electromagnetic induction. [7][8][9][10][11] The sensors based on electromagnetic induction will detect external magnetic field through electromotive force in an induction coil. On the other hand, sensors that operate with Lorentz force can detect magnetic field through displacements of their resonators, which are related with the magnitude and direction of the applied magnetic field.…”

“…Recently, some research groups have developed magnetic field sensors considering silicon resonators. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] These sensors are smaller than the conventional superconducting quantum interference devices, fluxgate sensors, and optical fiber sensors. Silicon resonators-based sensors can be fabricated using batch standard silicon micromachined fabrication processes, which decrease their cost and allow the integration with electronic circuits.…”