A reliable technology concept for active power cycling to extreme temperatures

Nelhiebel, Michael; Illing, Robert; Schreiber, Christoph; Wöhlert, S.; Lanzerstorfer, S.; Ladurner, Markus; Kadow, C.; Decker, S.; Dibra, Donald; Unterwalcher, H.; Rogalli, M.; Robl, W.; Herzig, Thomas; Poschgan, M.; Inselsbacher, M.; Glavanovics, Michael; Fraisse, S.

doi:10.1016/j.microrel.2011.06.042

Cited by 36 publications

(20 citation statements)

References 6 publications

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“…This effect was observed by Ciappa and Malberti [15] on IGBTs subjected to short circuit loads and in that paper denoted as ''metal reconstruction''. Similar short circuit effects on the metallization of high side smart power devices have recently received increased attention [16,17]. Typical failure modes of the devices are bond lift-offs or shorts due to melt-up of the device triggered either by latch-up of the DMOS or thermal runaway.…”

Section: Failure Modes and Mechanismsmentioning

confidence: 99%

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Active cycling reliability of power devices: Expectations and limitations

Kanert

2012

Microelectronics Reliability

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Section: Failure Modes and Mechanismsmentioning

confidence: 99%

“…Fig. 8 illustrates the high power dissipation due to the short circuit event and the high peak temperatures that is caused by this power dissipation [17].…”

Section: Failure Modes and Mechanismsmentioning

confidence: 99%

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Active cycling reliability of power devices: Expectations and limitations

Kanert

2012

Microelectronics Reliability

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“…Since Aluminum (Al) has a low elastic limit, the source metallization is expected to deform even for moderate temperature excursions (200°C). Cubased metallizations experience similar degradations [7] but seem to have a better overall endurance [8]. Deformations of the source metal have a clear impact on the drain-source resistance (R dson ), which increases over cycles.…”

Section: Introductionmentioning

confidence: 99%

In-depth investigation of metallization aging in power MOSFETs

Ruffilli

Berkani

Dupuy³

et al. 2015

Microelectronics Reliability

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The long-term reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Previous studies have shown that the source metallization (top metal and wires) is a failure-prone location of the component. To study how the top Aluminum metallization microstructure ages, we have performed ion and electron microscopy and mapped the grain structure before and after avalanche and short-circuit aging tests. The situation under the bond wires is significantly different as the bonding process induces plastic deformation prior to aging. Ion microscopy seems to show two inverse tendencies: grain growth under the wires and grain refinement elsewhere in the metallization. Transmission electron microscopy shows that the situation is more complex. Rearrangement of the initial defect and grain structure happen below and away from the wire. The most harmful fatigue cracks propagate parallel to the wire/metal bonding interface.

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“…Especially in the fields of automotive applications, where lifetime requirements (typically 10,000 h at 150°C) are constantly increasing [2], and miniaturization of power devices leads to always higher current and power densities and, thereby, chip temperatures [3], particular attention must be paid to the bond-wire/pad-metal interface.…”

Section: Introductionmentioning

confidence: 99%