2013 IEEE International Integrated Reliability Workshop Final Report 2013
DOI: 10.1109/iirw.2013.6804169
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A reliable TDDB lifetime Projection model for advanced gate stack

S. C. Chen
1
,
C. L. Chen
2
,
Y.-H Lee
3
et al.
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Cited by 6 publications
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References 12 publications
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GDI failure mechanism investigation and improvement in HK process

Cheng
1
,
Yang
2
,
Wang
3
2017
2017 China Semiconductor Technology International Conference (CSTIC)
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GDI failure mechanism investigation and improvement in HK process

Cheng
1
,
Yang
2
,
Wang
3
2017
2017 China Semiconductor Technology International Conference (CSTIC)
0
0
0
0
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The physical mechanism investigation of AC TDDB behavior in advanced gate stack

Chen
1
,
Chang
2
,
Chen
3
et al. 2014
2014 IEEE International Reliability Physics Symposium
13
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1
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Investigation of hot-carrier-injection assisted TDDB and multi-stage hot-hole induced leakage current in BCD HV NMOS

Huang
1
,
Chen
2
,
Lee
3
et al. 2017
2017 IEEE International Reliability Physics Symposium (IRPS)
3
0
1
0
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