A Reliable Model Parameter Extraction Method Applied to AlGaN/GaN HEMTs

Jarndal, Anwar; Essaadali, Riadh; Kouki, Ammar B.

doi:10.1109/tcad.2015.2460461

Cited by 66 publications

(47 citation statements)

References 19 publications

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“…Device structure, fabrication process, and characterization procedure, for the considered GaN‐on‐Si transistors, are reported in Refs. and The pinch‐off S‐parameters were measured at V GS = −2.5 V and V DS = 0 V and unbiased at V GS = 0 V and V DS = 0 V, for the three considered GaN on Si devices. The dc characteristics (IV‐curves) of the larger device of 2 mm gate‐width is shown in Figure .…”

Section: Extraction Resultsmentioning

confidence: 99%

Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization

Jarndal

Hussein

2018

Int J RF Microw Comput Aided Eng

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This article presents efficient parameters extraction procedure applied to GaN High electron mobility transistor (HEMT) on Si and SiC substrates. The method depends on combined technique of direct and optimization‐based to extract the elements of small‐signal equivalent circuit model (SSECM) for GaN‐on‐Si HEMT. The same model has been also applied to GaN‐on‐SiC substrate to evaluate the effect of the substrates on the model parameters. The quality of extraction was evaluated by means of S‐parameter fitting at pinch‐off and active bias conditions.

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Section: Extraction Resultsmentioning

confidence: 99%

Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization

Jarndal

Hussein

2018

Int J RF Microw Comput Aided Eng

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“…At this point, it is imperative to note that some of the reported models do not fully define the behavior of devices as they consist of less elements and therefore do not account for all the parasitics. Some other models based on optimization and heuristics, on the other hand, provide a good estimate of the device behavior . However, these are not generic small signal model parameter extraction methods and therefore not applicable for all types of situations because of the high contact resistances of the GaN device.…”

Section: Introductionmentioning

confidence: 99%

An accurate and simplified small signal parameter extraction method for GaN HEMT

Khusro

Hashmi

Ansari

et al. 2019

Circuit Theory & Apps

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Summary In this paper, development of a small signal model for 2 × 200 μm GaN HEMT based on the conventional 20‐element model is presented. The proposed model presents a direct parameter extraction algorithm, instead of the hybrid optimization approach, that provides simplification, accuracy, and less computational complexity. The extrinsic elements are extracted using a modified cold pinch‐off condition while discarding the unwanted forward biasing of the gate. The negative drain to source capacitance Cds is also observed in the ohmic region (for smaller VDS). An excellent agreement found between the measured and modeled data for a wide range of frequencies and bias values shows the effectiveness of the proposed approach. The proposed modeling technique is validated with a good agreement between the achieved bias dependency of intrinsic parameter values and the respective theoretical parameter values.

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“…A wideband and accurate small‐signal equivalent circuit model (SSECM) is the foundation of large‐signal modeling in bottom‐up method and can also be used to build noise models, which makes small‐signal modeling of great significance to the development and application of GaN monolithic microwave integrated circuit. Many research works on SSECM of GaN HEMTs have been done in the past decade . The parameter extraction approaches can be classified into direct, optimization, and hybrid direct optimization .…”

Section: Introductionmentioning

confidence: 99%

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

Yong-bo

Wang³

et al. 2018

Int J Numerical Modelling

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In this paper, a scalable and multibias parameter extraction method for gallium nitride high electron mobility transistor small‐signal model has been proposed. The main advantage of this method is that the temperature‐dependent access resistances and nonlinear thermal resistance have been taken into account, which makes the extracted access resistances and intrinsic elements more physical and reliable at different bias conditions for various device dimensions. The new modeling method has been validated by comparing the simulated small‐signal S‐parameters with the measured data over a wide range of frequency.

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A Reliable Model Parameter Extraction Method Applied to AlGaN/GaN HEMTs

Cited by 66 publications

References 19 publications

Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization

Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization

An accurate and simplified small signal parameter extraction method for GaN HEMT

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

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