A reliable Cu–Sn stack bonding technology for 3D-TSV packaging

Lv, Yaping; Chen, Mingxiang; Cai, Mingxian; Liu, Sheng

doi:10.1088/0268-1242/29/2/025003

Cited by 27 publications

(9 citation statements)

References 15 publications

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“…叶焕等人 [152] 的研究中 Sn9Zn0.5 Ga0.7Pr 并未出现类似的锡须抑制现象. [153] 对 3D TSV 芯片做了堆叠键合研究, 清华大学 Wu 等人 [154] 采用 Cu-Sn 表面活化键合实现 MEMS TSV 互连. 哈尔滨工业大学 Li 等人 [155] 采用超声键合实现 Cu-Sn 3D 键合.…”

Section: 锡须问题unclassified

Development of lead-free solders in China during the past decade

Zhang

Chen

et al. 2016

Sci. Sin.-Tech.

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For the new lead-free solders research in China during the past decade, the research status and development trend of lead-free solders were reviewed synthetically. First of all, it is imperative to discuss the behaviors of different lead-free solder, and the effect of alloying, particles strength and nanominiaturization on lead-free solders. Secondly, the fluxes for lead-free solders were also reviewed and the research development of new flux was discussed. Thirdly, the applications of lead-free solders in electronic industry were remarked, and the related reliability issues were discussed. Lastly the future progress of lead-free solders was prospected, the issues of the lead-free solders were analyzed and some measures were shown for solving these problems, which can provide the theoretical reference for the lead-free solders.

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Section: 锡须问题unclassified

Development of lead-free solders in China during the past decade

Zhang

Chen

et al. 2016

Sci. Sin.-Tech.

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“…[11,[13][14][15][16][17][18] Although these tests were performed to prove the technology for high-temperature applications, the shear strength of the tested samples was all carried out at room temperature. Mechanical integrity at temperature surpassing the melting temperature of Sn has long been predicted, but experimental verification is scarce.…”

Section: Solid-liquid Interdiffusion (Slid) Wafer-levelmentioning

confidence: 99%

High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds

Luu

Høivik

Wang

et al. 2015

Metall Mater Trans A

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Wafer-level Cu-Sn SLID (Solid-Liquid Interdiffusion)-bonded devices have been evaluated at high temperature. The bonding process was performed at 553 K (280°C) and the mechanical integrity of the bonded samples was investigated at elevated temperatures. The die shear strength of Cu-Sn systems shows a constant behavior (42 MPa) for shear tests performed from room temperature [RT-298 K (25°C)] to 573 K ( to 300°C). This confirms experimentally the high-temperature stability of Cu-Sn SLID bonding predicted from phase diagrams. The fractography of sheared samples indicates brittle-fracture mode for all samples shear tested from RT to 573 K (300°C). The two dominating failure modes are Adhesive fracture between the Ti-W adhesion layer and the Si, and interface fracture at the original bond interface. This indicates that the bonding material itself is stronger than the observed shear strength values, and since these interfaces can be improved with process optimization even stronger bonds can be achieved. The presented work offers fundamental evidence of the Cu-Sn SLID bonding process for operating microelectronics and MEMS at high temperature.

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“…The third trend concerns 3D integration and advanced packaging for which the stacking of different structures requires different level of interconnections, and therefore, a process with joining temperature sufficiently lower than the melting temperature should be performed several times on the same substrate [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Bubble formation and growth during Transient Liquid Phase Bonding in Cu/SnAg system for microelectronic packaging

Barik

Gillot

Hodaj

2021

J Mater Sci: Mater Electron

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In this work, we study the Transient Liquid Phase Bonding (TLPB) for flip chip interconnexion using copper pillar and SnAg solder alloy technologies. Cu and SnAg bumps with a size of 90 9 90 lm 2 were deposited using electroplating process with a thickness of 20 lm and 15-30 lm, respectively. Two types of Cu were deposited: with or without additives. Before the TLPB process, soldering experiments with or without pre-reflow were carried out at 250 °C in order to insure a good filling of the joint. Afterwards, isothermal holdings up to 4 h were performed in the temperature range between 250 and 350 °C under air atmosphere. Two main aspects of Cu/SnAg system are studied and analyzed: (i) the evolution of morphology, microstructure, and growth kinetics of intermetallics (IMCs) during the TLPB and especially (ii) the formation and growth of gas bubbles within the liquid solder during TLPB process. Destructive (scanning electron microscopy) and non-destructive (X-ray) characterizations are performed to analyze and understand the evolution of microstructure as well as the formation and evolution of cavities within the joint during the TLPB process. Non-destructive X-ray radiography with 5 lm resolution and 3D X-ray tomography analysis with 0.7 lm resolution were conducted for the same joint at different steps of its evolution between its initial state (just after the soldering process: about 3 min at 250 °C) and 4 h at 250 °C in order to follow ''in situ'' the evolution of volume defects inside the joint and especially the evolution of gas bubbles within the joints.

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A reliable Cu–Sn stack bonding technology for 3D-TSV packaging

Cited by 27 publications

References 15 publications

Development of lead-free solders in China during the past decade

Development of lead-free solders in China during the past decade

High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds

Bubble formation and growth during Transient Liquid Phase Bonding in Cu/SnAg system for microelectronic packaging

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