A Reliability-Oriented Startup Analysis of Injection-Locked Frequency Divider Based on Broken Symmetry Theory

Micro & Optical Tech Letters

2020

This paper reports an injection-locked frequency divider (ILFD) with a divide-by-five feature, a built-in balun, and low power consumption fabricated in a standard 0.18 μm CMOS process. By employing a fourth harmonic (4f 0) enhancement technique realized in a stacked cross-coupled pair and mixing with an injection signal (5f 0) through injection transistors, an output signal (f 0 = 5f 0-4f 0) is obtained without using extra passive devices. The built-in balun is employed to transfer a single-ended signal to differential signals injected into injection transistors. The proposed ILFD improves the locking range without the help of varactors and the power dissipation by adopting two cross-coupled transistor pairs. The proposed ILFD has the free-running frequency of 4.3 GHz and the injection frequencies from 21.1 to 22.1 GHz at an input power level of 0 dBm. The proposed ILFD core only consumes 3.75 mW from a supply voltage of 1.5 V.

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low‐power divide‐by‐five injection‐locked frequency divider with a built‐in balun

Micro & Optical Tech Letters

2020

“…Although the ILFT uses notch filters to suppress spurious issues [8], using more passive devices may suffer from the start-up condition and increase the chip area. For V-band applications, an injection-locked mechanism is a popular design principle to improve power consumption and operating frequencies [2,9].…”

Section: Introductionmentioning

confidence: 99%

V-band CMOS injection-locked frequency tripler using differential harmonic current injection technique

Analog Integr Circ Sig Process

2021

This letter presents a V-band CMOS injection-locked frequency tripler (ILFT) fabricated in a standard 90-nm CMOS process. By employing a differential harmonic current injection technique, a frequency doubler (2f 0 ) realized in the connected source terminal of injection transistors is to mix with injection signals (f 0 ) through injection transistors, and output signals (3f 0 = 2f 0 ? f 0 ) are obtained from output buffers. The proposed ILFT improves the locking range and power dissipation by adopting two cross-coupled transistor pairs, and strengthens the rejection ability of second-order harmonic by using a resonator network. The proposed ILFT has the free-running frequency of 62.49 GHz and locking ranges of 61.2 to 64.2 GHz as input injection signals from 20.4 to 21.4 GHz at an input power level of 0 dBm. The proposed ILFT core consumes 7.48 mW from a supply voltage of 1.1 V.

“…Injection‐locked frequency dividers (ILFDs) are popular to deal with the high‐speed issue because of owning the low power dissipation and operating at high frequencies 1–4 . By employing a high division ratio ILFD, the power‐hungry and divider stages could be alleviated and reduced 4 . But, the ILFD locking range is not enough to meet divider design requirements.…”

Section: Introductionmentioning

confidence: 99%

Low‐power divide‐by‐4 injection‐locked frequency divider using an inductive resonating technique

Micro & Optical Tech Letters

2021

An injection‐locked frequency divider (ILFD) with the low‐power divide‐by‐4 feature for K‐band applications in a 0.18 μm CMOS process is reported in this letter. Output differential signals (f0 = 4f0‐3f0) are obtained by the third‐harmonic signals (3f0) from the free‐running core mixing with injection signals (4f0) through injection transistors in the proposed ILFD. This improves the locking range and saves power consumption by employing an inductive resonator technique and double cross‐coupled transistor pairs without the help of varactors. For the proposed ILFD, the measured free‐running frequency is 5.126 GHz and input injection frequencies at an input power level of 0 dBm are from 19.4 to 21.4 GHz. From a supply voltage of 1.5 V, the proposed ILFD core only dissipates 4.2 mW.