A recessed-gap capacitive-gate GaAs CCD

Abstract

Abstmct-A new MESFET-compatible structure for GaAs capacitivegate CCD's is presented that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication. This new recessedgap structure solves the previous problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance associated with ultrasmall gaps. Dark current is also reduced. Modeling and experimental results are reported.