1992
DOI: 10.1109/16.129079
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Optimization of thin-film resistive-gate and capacitive-gate GaAs charge-coupled devices

Abstract: Computer simulation of high-speed gallium arsenide charge coupled devices is performed using a two-dimensional semiconductor device simulation program. The measured performance of fabricated GaAs CCD's is compared with modeled results. The effect of active layer thickness and doping concentration on the charge transfer efficiency (CTE) and the dynamic range is investigated using different layers. Various gate architectures are compared for optimum dynamic range and compatibility with GaAs MESFET technology. Th… Show more

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Cited by 9 publications
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References 34 publications
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