A Raman Study Of The Dopant Distribution In Submicron Pn Junctions In B <sup> + </sup>  Or BF   2    <sup> + </sup>  Ion Implanted Silicon

Wilton, A. C. De; Simard‐Normandin, M.; Wong, P. T. T.

doi:10.1117/12.961190

Cited by 2 publications

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“…After annealing, the same ratio technique can be used to quantify the dopant-induced local-mode intensities and changes in the second-order phonon spectrum ( 19). The sensitivity of Raman spectroscopy for evaluating dopan distributions will be discussed in a future publication.…”

Section: Feasibility For Process Monitoringmentioning

confidence: 99%

“…'l'he sampling depth in a thermal-wave system is reported to be -3 p m using I MHz modulation (21). Raman sampling depths are dependent on the excitation wavelength, so that submicrometre depth profiling can be accomplished with a tunable laser (19), and the sensitivity can be optimized by matching the sampling depth to the projected range of the implant. Numerous recent publications in the literature demonstrate the wide range of other potential applications of Raman spectroscopy for analysis in the field of .silicon process technology.…”

Section: Comparison Of Raman Spectroscopy With Other Techniques For Mmentioning

confidence: 99%

“…Numerous recent publications in the literature demonstrate the wide range of other potential applications of Raman spectroscopy for analysis in the field of .silicon process technology. These include the analysis of doping profiles (19), monitoring of annealing ( 5 ) , and evaluation of residual damage (6) or subsurface damage caused by reactiveion etching (7). Surface modifications including thermal oxidation (1 I), deposited oxides (12), and formation of silicides (8)(9)(10) as well as strain and microadhesion of thin layers have also been studied by Raman spectroscopy (17).…”

Section: Comparison Of Raman Spectroscopy With Other Techniques For Mmentioning

confidence: 99%

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Nondestructive ion-implant monitoring using laser Raman spectroscopy

Wilton¹,

Simard‐Normandin²,

Wong³

1987

Can. J. Phys.

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A new Raman technique for monitoring low-dose ion implants is described. The capability for detection of implants of 20-50 keV B ' (or equivalent BFi energies) at doses as low as -10"' cm ' is of particular interest. Currently, there are few other noncontact, nondestructive methods of evaluating implant doses below 10'' c m ' (e.g., V,-adjust, field, and p-well implants) in patterened production wafers. The feasibility of using the technique for monitoring V,-adjust implants is demonstrated.Low-energy B ' and BF; ion implants in silicon were studied to determine the detection limits of the technique. vmples were analyzed immediately after implantation, without annealing. Implant doses in the range from 3 X 10'' c m --to the detection limit of 3 X 101° cm-' were characterized in this way. The presence of a surface layer of SiOz (5 100 nm thick) did not interfere with the measurements. A tunable laser was used to optimize the sensitivity to implants of different energies.Since the frequency spectrum of Raman scattering can also provide information on the structure of the damaged region or on the distribution of activated boron and residual ion damage after annealing, Raman spectroscopy shows promise in several applications for in situ process monitoring of ion implantation for very large scale integration technology.On prtsente une nouvelle technique Raman qui permet dlCtudier des Cchantillons implant& a faible dose. I1 est particulikrement intCressant de pouvoir dttecter la presence du bore implant6 entre 20 et 50 keV (ou h des Cnergies tquivalentes pour le B G ) avec des doses aussi faibles que 101Ocm-'. Jusqu'i prtsent, il existe peu de mCthodes non-destruetives, ne necessitant aucun contact, qui permettent l'tvaluation d'implantations ioniques sur des pastilles engravtes 21 des doses inferieures 2 10" cm-' (par exemple l'implantation pour l'ajustement de tension de seuil, pour champ ou pour puits-p). La possibilitt d'utiliser cette technique pour mesurer et verifier l'implantation ntcessaire pour I'ajustement de la tension de seuil est dCmontrCe.L'implantation ionique du B+ et du BFJ dans du silicium fut CtudiCe afin de determiner les limites de dttection de la mtthode. Les Cchantillons furent analyses immkdiatement aprks l'implantation, sans recuit. Des doses allant de 3 X 1016 cm-' jusqu'i la limite de dttection de 3 X 1010cm-2 purent ainsi Etre earactCrisCes. La prtsence d'une couche superficielle de SiO' (5100 nm d'tpaisseur) n'affecta pas les risultats de mesure. Un laser 2 longueur d'onde variable fut utilisC afin d'optimiser la sensibilitt de la technique i des implantations d'tnergies diffirentes.Puisque le spectre Raman peut aussi dCvoiler certaines caractCristiques de la structure de la zone endommagee, ou de la distribution des atomes de bore activts et du dommage ionique residue1 aprks recuit, la spectroscopie Raman se montre prometteuse pour diverses applications concemant la vtrification it1 situ du processus d'irnplantation ionique pour les technologies d'intkgration a trks grande ou a ultra gran...

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Section: Feasibility For Process Monitoringmentioning

confidence: 99%

Section: Comparison Of Raman Spectroscopy With Other Techniques For Mmentioning

confidence: 99%