Micro-Raman investigation of p-type B doped Si(1 0 0) revisited

Palleschi, Stefano; Mastrippolito, Dario; Benassi, P.; Nardone, M.; Ottaviano, L.

doi:10.1016/j.apsusc.2021.149691

Cited by 9 publications

(7 citation statements)

References 56 publications

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“…This Raman spectral feature was also significantly broadened and non-Lorentzian in character, aspects generally in accord with a high doping level and/or strain. 55,56 If the large shift in the peak position only reflected the free carrier concentration, a value of at least 3 × 10 20 cm −3 would be inferred in the electrodeposited Si film. 57 If the shift was predominantly from stress induced by the considerable incorporation of Ga, the Raman data would correspond to a stress of 19.9 kbar in the electrodeposited Si films.…”

Section: ■ Resultsmentioning

confidence: 99%

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

et al. 2022

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Epitaxial films of Si have been prepared at room temperature by electrochemical liquid phase epitaxy (ec-LPE). Crystalline Si films were grown on both Si(111) and Si(100) substrates, demonstrating clear evidence of low-temperature homoepitaxy. The ec-LPE method was demonstrated as a hybrid approach that combined elements of conventional electrodeposition and traditional liquid phase epitaxy. Voltammetric and amperometric data were collected that indicated conditions where Si ec-LPE is possible with SiCl 4 in propylene carbonate electrolyte and eutectic gallium indium (e-GaIn) thin-film electrodes. Scanning electron micrographs, scanning transmission electron micrographs, and electron and X-ray diffraction data demonstrated that epitaxy extended throughout films that were several microns in thickness. Raman spectra, high-resolution X-ray diffraction data, time-of-flight secondary ion mass spectrometry, and energy-dispersive elemental mapping indicated that the asprepared films were uniformly hyperdoped with Ga at >10 at %. These cumulative results demonstrate a distinct new way to realize crystalline Si films suitable for optoelectronic applications.

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Section: ■ Resultsmentioning

confidence: 99%

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

et al. 2022

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“…Figure shows the Raman spectra of the fabricated devices. For the Al/Ge/Sn/Ge/Sn on p -Si and n -Si substrates, there is a peak at 523 cm –1 that corresponds to the crystalline Si substrates. , A broad band at 350–520 cm –1 is detected for the prepared Al/Si/Sn/Ge/Sn on FTO, which corresponds to poly:Si formed by MIC of the deposited Si layer and the SiO 2 vibrational mode formed because of the oxidation of Si during annealing at low vacuum levels. − The appearance of poly:Ge and GeSn modes at 300 cm –1 are shifted toward lower wavenumbers due to the transformation of the amorphous germanium layer to a polycrystalline one via tin-induced crystallization and the incorporation of Sn metal inside the Ge network . The signature of the GeSn mode is weak due to the strong peaks of the c:Si, corresponding to the silicon substrates.…”

Section: Resultsmentioning

confidence: 99%

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

Nawwar

Ghazala

El-Deen

et al. 2022

Crystal Growth & Design

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Solubility of Sn in Ge network gives it a preference for photonic applications, because of the direct transition in GeSn alloy. Here, we employed the metal-induced crystallization (MIC) process of amorphous Ge and Si via Sn as a novel mechanism to incorporate Sn inside Ge and Si networks. (Al/Si/Sn/Ge/Sn) and (Al/Ge/Sn/Ge/Sn) multilayers are deposited by thermal vacuum evaporation on different substrates. The devices are annealed under low vacuum at 500 °C to incorporate the oxygen for band-gap tuning. The structure of Ge-doped nanocrystals is investigated. The direct transition and band-gap values have been estimated using diffuse reflectance spectroscopy and photoluminescence (PL) measurements. PL indicated that the junctions have emissions from visible to NIR regions that make them promising as optically pumped white-light sources as well as waveguide applications, and the impact of the base substrate on enhancing the emission has been investigated via PL measurements. Electroluminescence measurements show that the prepared heterostructures on fluorine-doped tin oxide (FTO) substrate have sharp random lasing spikes over the range of PL samples spectra as the sample can lase randomly by light scattering through the Ge-doped nanocrystalline materials. The charge carrier lifetime measurements show high lifetime for the prepared sample. These give them the chance to be a candidate for white-light random laser diode applications.

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“…Further confirmation of the net doping concentrations was obtained from micro-Raman measurements. [32,33] In Figure 6 a typical Raman spectrum of CSS silicon is depicted revealing essentially the Lorentz-shaped spectral line of optical phonons typical of intrinsic bulk crystalline silicon. Its slight asymmetry is related to doping via coupling of the discrete state of the phonon with the continuum of states by the intraband transitions of the free carriers known as the Fano-resonance effect of Raman scattering.…”

Section: Resultsmentioning

confidence: 99%

“…In that study, doping concentrations extending over a range much larger than relevant for CSS silicon were considered and a linear dependence of 1/q versus free carrier concentration was not observed. [33] To check possible correlations between the parameters obtained from the Raman-line fitting, we depicted them against each other in scatter plots in Figure 8a,b. Figure 8a indicates that the half-width tends to decrease with peak position, i.e., the areas of higher compressive stress have better crystallinity.…”

Section: Resultsmentioning

confidence: 99%

Multicrystalline, Highly Oriented Thick‐Film Silicon from Reduction of Soda‐Lime Glass

Schall,

Ebbinghaus,

Strelow

et al. 2023

Adv Materials Inter

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The study describes synthesis and characterization of > 10 µm thick multicrystalline (mc), highly oriented, p‐doped silicon layers by aluminothermic reduction of low‐cost soda‐lime glass. X‐ray diffraction shows a highly preferred (111)‐orientation and excellent crystallinity. Low compressive stress and very good crystallinity are confirmed by the peak position and width of the Raman LO‐phonon line, approaching the one of bulk single‐crystalline wafer material. Due to strong bonding to the glass substrate layer, spalling is not observed. A conductive aluminum‐rich oxide layer is formed underneath the silicon, serving as an electrical back‐contact for electronic devices. Using secondary ion mass spectrometry very low concentrations of 1014–1015 cm−3 of impurities are found originating from the soda‐lime glass with an iron content below the detection limit. Furthermore, a plateau‐like, very homogenous Al concentration of ≈4 × 1018 cm−3 over a thickness of ≈10 µm is found, which corresponds to the solubility of Al in Si at the process temperature. Complete electronic activation within the plateau region is confirmed by carrier concentration measurements using electrochemical capacitance–voltage profiling and Raman spectroscopy. Hole concentrations in the range of few 1018 cm−3 are beneficial for the p‐type base material of full‐emitter cell mc‐silicon photovoltaic devices.

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Micro-Raman investigation of p-type B doped Si(1 0 0) revisited

Cited by 9 publications

References 56 publications

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

Multicrystalline, Highly Oriented Thick‐Film Silicon from Reduction of Soda‐Lime Glass

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