A Raman spectroelectrochemical investigation of chemical bath deposited CuxS thin films and their modification

Munce, Carolyn G.; Parker, Gretel K.; Holt, Stephen A.; Hope, Gregory Alan

doi:10.1016/j.colsurfa.2006.08.045

Cited by 149 publications

(83 citation statements)

References 21 publications

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“…These peak positions match quite well the response expected from CZTS [11,12]. Sample C3 also shows a small peak at 475 cm -1 which could originate from CuS [13] since this sample has the highest Cu-content. The XRD and Raman results, together with the homogenous precursor appearance in SEM, makes us suggest that the reactively sputtered precursors have a non-equilibrium structure, with the sulfur ions in the cubic zinc-blende configuration and the metal ions randomly ordered at the cation sites; this is more thoroughly discussed in [7].…”

Section: Resultssupporting

confidence: 79%

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

et al. 2013

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Reactively sputtered Cu-Zn-Sn-S precursor films are prepared and recrystallized by rapid thermal processing to generate Cu 2 ZnSnS 4 solar cell absorber layers. We study how the film properties are affected by substrate heating and composition. The stress, density and texture in the films were measured. Compressive stress was observed for the precursors but did not correlate to the deposition temperature, and had no influence on the properties of the annealed films or solar cells. However, the substrate temperature during precursor deposition had a large effect on the behaviour during annealing and on the solar cell performance. The films deposited at room temperature had, after annealing, smaller grains and cracks, and gave shunted devices. Cracking is suggested to be due to a slightly higher sulfur content, lower density or to minor differences in material quality. The grain size in the annealed films seems to increase with higher copper content and higher precursor deposition temperature. The best device in the current series gave an efficiency of 4.5 %.

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Section: Resultssupporting

confidence: 79%

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

et al. 2013

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“…4 shows the Raman spectra of the back contact of the absorber obtained from samples A and B after the removal of the absorber, respectively. The spectrum from sample A was characterized by the presence of a dominant peak at 252 cm −1 which agrees with the main peak reported for ZnSe [22]; the main peak at 190 cm −1 and weaker contributions at 169 cm −1 and 221 cm −1 has been identified with the vibrational mode of binary SnS [23][24]. It is important to note that due to the Zn-rich conditions used in these films (as confirmed by EDX in Table 2), the probability to form Zn-based binary phases is likely.…”

Section: Ramansupporting

confidence: 71%

Improving efficiency of electrostatic spray-assisted vapor deposited Cu2ZnSn(S,Se)4 solar cells by modification of Mo/absorber interface

2015

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a b s t r a c t a r t i c l e i n f oElectrostatic spray-assisted vapor deposition (ESAVD) is a non-vacuum, low cost and eco-friendly method to produce Cu(In,Ga)Se 2 and Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorbers for thin film solar cells, and it is a very promising method for industrialization due to it is high deposition speed and close to unity deposition efficiency. In this work, in order to improve the efficiency of ESAVD deposited CZTSSe solar cells, an ultrathin ZnO (circa 10 nm) layer was employed as an intermediate layer between CZTSSe and Mo back contact to avoid the direct contact between Mo and CZTSSe and reduce the decomposition of CZTSSe during annealing process. XRF and EDX were used to characterize the chemical composition of CZTSSe before and after selenization respectively. SEM and Raman results showed the improved absorber morphology and the reduced direct interfacial reaction between CZTSSe and Mo. The improvement of the CZTSSe/Mo interface due to the intermediate layer was also reflected in the quality of the derived photovoltaic devices, leading to an improved efficiency of ESAVDdeposited kesterite solar cells from 3.25% to 4.03%.

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“…This procedure, clearly, eliminates Cu 2-x S crystallites, from the absorber layers. The evidence resides in the fact that after KCN treatment the Raman peak at 475 cm -1 , corresponding to Cu 2-x S, is absent [18].…”

Section: Resultsmentioning

confidence: 99%

Precursors' order effect on the properties of sulfurized Cu₂ZnSnS₄thin films

Fernandes

Salomé

Cunha

2009

Semicond. Sci. Technol.

111

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Abstract:A dc magnetron sputtering based method to grow high quality Cu 2 ZnSnS 4 (CZTS) thin films, to be used as absorber layer in solar cells, is being developed. This method combines dc sputtering of metallic precursors with sulfurization in S vapour and with post growth KCN treatment for removal of possible undesired Cu 2-x S phases. In this work we report the results of a study of the effects of changing the precursors' deposition order on the final CZTS films' morphological and structural properties. The effect of KCN treatment on the optical properties was also analysed through diffuse reflectance measurements. Morphological, compositional and structural analyses of the various stages of the growth have been performed using stylus profilometry, SEM/EDS analysis, XRD and Raman Spectroscopy. Diffuse reflectance studies have been done in order to estimate band gap energy of the CZTS films.We tested two different deposition orders for the copper precursor, namely:Mo/Zn/Cu/Sn and Mo/Zn/Sn/Cu.The stylus profilometry analysis shows high average surface roughness in the ranges 300 nm to 550 nm and 230 nm to 250 nm before and after KCN treatment, respectively. All XRD spectra show preferential growth orientation along (112) .

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A Raman spectroelectrochemical investigation of chemical bath deposited CuxS thin films and their modification

Cited by 149 publications

References 21 publications

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Improving efficiency of electrostatic spray-assisted vapor deposited Cu2ZnSn(S,Se)4 solar cells by modification of Mo/absorber interface

Precursors' order effect on the properties of sulfurized Cu₂ZnSnS₄thin films

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A Raman spectroelectrochemical investigation of chemical bath deposited CuxS thin films and their modification

Cited by 149 publications

References 21 publications

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Improving efficiency of electrostatic spray-assisted vapor deposited Cu2ZnSn(S,Se)4 solar cells by modification of Mo/absorber interface

Precursors' order effect on the properties of sulfurized Cu2ZnSnS4thin films

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Precursors' order effect on the properties of sulfurized Cu₂ZnSnS₄thin films