A radiation-hardened Sense-Switch pFLASH cell for FPGA

Liu, Guozhu; Li, Bing; Wei, Jinghe; Genshen, Hong; Zong-guang, YU; Wang, Haibin

doi:10.1016/j.microrel.2019.113514

Cited by 7 publications

(1 citation statement)

References 10 publications

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“…The sense-switch n-channel flash has already been applied to the Microsemi's series product ranging from 0.25 μm to 65 nm, but its reliability and radiation hardness are quite challenging. While there are few reports on sense-switch pchannel flash, compared with n-channel flash, p-channel flash has its special advantages in high-speed programming and low-power operation [11] , as well as the intrinsic radiation hardness [12,13] . Thus, it is meaningful and valuable to have an overall evaluation on the sense-switch p-channel flash, aiming to make high reliable flash-based FPGA.…”

Section: Introductionmentioning

confidence: 99%

Reliability evaluation on sense-switch p-channel flash

Song¹,

Liu²,

Zhang³

et al. 2021

J. Semicond.

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In this paper, the reliability of sense-switch p-channel flash is evaluated extensively. The endurance result indicates that the p-channel flash could be programmed and erased for more than 10 000 cycles; the room temperature read stress shows negligible influence on the p-channel flash cell; high temperature data retention at 150 °C is extrapolated to be about 5 years and 53 years corresponding to 30% and 40% degradation in the drive current, respectively. Moreover, the electrical parameters of the p-channel flash at different operation temperature are found to be less affected. All the results above indicate that the sense-switch p-channel flash is suitable to be used as the configuration cell in flash-based FPGA.

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Section: Introductionmentioning

confidence: 99%

Reliability evaluation on sense-switch p-channel flash

Song¹,

Liu²,

Zhang³

et al. 2021

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

Programming mechanism and characteristics of Sense-Switch pFlash cells

Liu

Wei

Zong-guang

et al. 2023

Microelectronics Reliability

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Research on eigenstate current control technology of Flash-based FPGA

Shan¹,

Cao²,

Liu³

2022

J. Semicond.

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To solve the Flash-based FPGA in the manufacturing process, the ion implantation process will bring electrons into the floating gate of the P-channel Flash cell so that the Flash switch is in a weak conduction state, resulting in the Flash-based FPGA eigenstate current problem. In this paper, the mechanism of its generation is analyzed, and four methods are used including ultraviolet light erasing, high-temperature baking, X-ray irradiation, and circuit logic control. A comparison of these four methods can identify the circuit design by using circuit logic to control the path of the power supply that is the most suitable and reliable method to solve the Flash-based FPGA eigenstate current problem. By this method, the power-on current of 3.5 million Flash-based FPGA can be reduced to less than 0.3 A, and the chip can start normally. The function and performance of the chip can then be further tested and evaluated, which is one of the key technologies for developing Flash-based FPGA.

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A radiation-hardened Sense-Switch pFLASH cell for FPGA

Cited by 7 publications

References 10 publications

Reliability evaluation on sense-switch p-channel flash

Reliability evaluation on sense-switch p-channel flash

Programming mechanism and characteristics of Sense-Switch pFlash cells

Research on eigenstate current control technology of Flash-based FPGA

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