A quasioptical doubler-array

Steup, D.; Simon, A.; Shaalan, Mohamed; Grüb, A.; Lin, Chih-I.

doi:10.1007/bf02101392

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…IV. QUASI-OPTICAL TECHNIQUE Recent developments give a solid state response for power capabilities at millimetre and sub-millimetre waves [4]. Fig.…”

Section: Results For the Planar Doublermentioning

confidence: 99%

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High Efficiency Planar Frequency Multiplier at Millimetre Waves and Quasi-Optical Investigations for (Sub) Millimetre Applications

Bras

Goff

Deschamps

et al. 1999

29th European Microwave Conference, 1999

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This paper presents the design and measurement of a hybrid varactor frequency multiplier in the millimetre wave range and the first investigations on a quasi-optical frequency doubler. For the planar circuit, a multilayer technology was used for the synthesis of the source and load impedances of the varactor. The conversion losses are about 12 dB at 62 GHz with an output power of 10.8 dBm.The measurement test bench and results on passive circuits in quasi-optical technology are presented. A quasi-optical doubler has also been investigated and designed and the first results are presented.

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“…IV. QUASI-OPTICAL TECHNIQUE Recent developments give a solid state response for power capabilities at millimetre and sub-millimetre waves [4]. Fig.…”

Section: Results For the Planar Doublermentioning

confidence: 99%

“…To design a millimetre doubler, the hybrid active grid of figures 6 and 7 with 69 cells, was chosen because of its simplicity ( [4]). The unit cell consists of two quarterwave dipole antennas in quadrature polarisation at the fundamental (38 GHz) and at the second harmonic (76 GHz).…”

Section: Results For the Planar Doublermentioning

confidence: 99%

High Efficiency Planar Frequency Multiplier at Millimetre Waves and Quasi-Optical Investigations for (Sub) Millimetre Applications

Bras

Goff

Deschamps

et al. 1999

29th European Microwave Conference, 1999

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“…In the high frequency range, i.e. millimeter and submillimeter-wave, systems are fabricated using an MMIC technology (Sasaki et al (2)), quasi-optical techniques (Steup et al (3)) or even hybrid (MIC or :MHMIC) technology for lower frequencies (Ka band).…”

Section: Introductionmentioning

confidence: 99%

Ka Band Test Fixture with DC Bias Circuit for Active Device Characterization

Goff

Bourreau

Peden

1998

28th European Microwave Conference, 1998

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This paper presents the S parameter measurements of PHEMT chip transistors in the Ka band. The transistor is mounted on an alumina substrate on which the DC bias circuit is included using a multilayer technology. This is an interesting solution because the bias circuit is used to improve the stability of the active device especially in the low frequency range by implementing SMC resistors and capacitors.

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