A quasi-one-dimensional analysis of vertical JFET devices operated in the bipolar mode

Bellone, Salvatore; Caruso, Antonio; Spirito, P.; Vitale, G.

doi:10.1016/0038-1101(83)90096-5

Cited by 51 publications

(16 citation statements)

References 9 publications

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“…The model of the bipolar operation of the BMFET, developed in [9], is obtained by subdividing the volume between the source and drain into three regions, as shown in Fig. 3(a).…”

Section: A the Bipolar Region Of The Characteristicsmentioning

confidence: 99%

“…[ 1 11, [9]. In the following, we recall the basic results of these models, which will be used in the next section to model the switching transient.…”

Section: Introductionmentioning

confidence: 99%

“…The model is based on approximate, yet quite accurate, solutions of the device transport equations, based on the same approach that was used to describe its static output characteristics [9], [ 1 11.…”

Section: Introductionmentioning

confidence: 99%

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The turnoff transient of the bipolar-mode field-effect transistor

Vitale

Busatto²

1988

IEEE Trans. Electron Devices

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A model of the turnoff transient of the field-effect transistor, operated in the bipolar mode (BMFET), is developed. It is shown that the transient consists of two parts pertaining to the two-carrier and to the one-carrier operations of the device, respectively, the former being much slower than the latter. The model allows the prediction of the switching transient from the basic device parameters; thus, it allows an understanding of the underlying physics of BMFET operation and why the BMFET is faster than other bipolar devices. The model has also been found to he in good quantitative agreement with experiments, and thus it is a useful tool for the design of the BMFET.

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“…The model of the bipolar operation of the BMFET, developed in [9], is obtained by subdividing the volume between the source and drain into three regions, as shown in Fig. 3(a).…”

Section: A the Bipolar Region Of The Characteristicsmentioning

confidence: 99%

“…[ 1 11, [9]. In the following, we recall the basic results of these models, which will be used in the next section to model the switching transient.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The turnoff transient of the bipolar-mode field-effect transistor

Vitale

Busatto²

1988

IEEE Trans. Electron Devices

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“…To obtain the silicon device having both a breakdown voltage of several hundred volts and a practical amount of current-carrying capacity, a bipolar drive is necessary. There are two types of bipolar drive: (1) a type in which the minority carriers are injected from the anode (e.g., the IGBT and thyristor) and (2) a type in which injection takes place from near the cathode (e.g., bipolar transistors, BSIT [7], BMFET [8]). GTBT belongs to the latter category.…”

Section: Introductionmentioning

confidence: 99%

Development of a grounded‐trench MOS‐assisted bipolar‐mode FET

Murakami

Asada

2004

Electron Comm Jpn Pt II

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SUMMARYThe grounded-trench MOS-assisted bipolar-mode FET, or GTBT, is made by introducing an insulated trench electrode into a bipolar-mode JFET. This resulting device has normally-off characteristics which are retained until avalanche breakdown, a high current gain, high rate switching, and so on. This paper summarizes GTBT's structure, mechanism, our design approach to enhance its functionality, and the various characteristics of the chips we fabricated.

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“…However, devices such as insulated gate bipolar transistor (IGBT) and bipolar mode field effect transistor (BMFET) use drift region conductivity modulation to derive very small ON resistance and hence negligible conduction losses [1][2][3][4]. BMFETs are also used very commonly in optical applications as an optically controlled switch [5][6][7][8] and have been reported both on GaAs [9][10][11] and silicon [12][13][14][15][16][17][18][19][20][21][22]. The most commonly studied BMFET devices have N-type epitaxial drift region and P + -gates.…”

Section: Introductionmentioning

confidence: 99%

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

Kumar

Bahl²

2006

IEEE Trans. Electron Devices

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A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p + -regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting minority carriers into the drift region. The SBMFET is demonstrated to have improved current gain, identical breakdown voltage and ON-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBMFET is much simpler and obliterates the need for deep thermal diffusion of P+-gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications.

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A quasi-one-dimensional analysis of vertical JFET devices operated in the bipolar mode

Cited by 51 publications

References 9 publications

The turnoff transient of the bipolar-mode field-effect transistor

The turnoff transient of the bipolar-mode field-effect transistor

Development of a grounded‐trench MOS‐assisted bipolar‐mode FET

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

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