The turnoff transient of the bipolar-mode field-effect transistor

Abstract

A model of the turnoff transient of the field-effect transistor, operated in the bipolar mode (BMFET), is developed. It is shown that the transient consists of two parts pertaining to the two-carrier and to the one-carrier operations of the device, respectively, the former being much slower than the latter. The model allows the prediction of the switching transient from the basic device parameters; thus, it allows an understanding of the underlying physics of BMFET operation and why the BMFET is faster than other bipolar devices. The model has also been found to he in good quantitative agreement with experiments, and thus it is a useful tool for the design of the BMFET.

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

“…MOS switches used in high-current medium-power switching applications, have good switching characteristics but suffer from high ON resistance. However, devices such as insulated gate bipolar transistor (IGBT) and bipolar mode field effect transistor (BMFET) use drift region conductivity modulation to derive very small ON resistance and hence negligible conduction losses [1][2][3][4]. BMFETs are also used very commonly in optical applications as an optically controlled switch [5][6][7][8] and have been reported both on GaAs [9][10][11] and silicon [12][13][14][15][16][17][18][19][20][21][22].…”