A quasi-matrix ferroelectric memory for future silicon storage

Nishihara, T.; Ito, Yasuyuki

doi:10.1109/jssc.2002.802358

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Cited by 4 publications

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“…[3] Alternatively, the memory elements can be formed in a continuous film from the crossed regions of parallel bars of top and bottom electrodes with the 90 • rotation. [4] During reading and writing cycles, a cell capacitor is polarized by giving a bias between selected top and bottom electrode bars. This configuration facilitates the three-dimensional (3-D) integration of memory stacking with a low production cost.…”

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confidence: 99%

Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi ₂ Ta ₂ O ₉ /Pt Thin-Film Capacitors

Chen¹,

Jiang²

2011

Chinese Phys. Lett.

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We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage. To avoid the crosstalk problem between adjacent memory cells, the safe distance between adjacent elements of Pt/SrBi2Ta2O9/Pt thin-film capacitors is estimated to be 0.156 µm. Moreover, the fatigue of Pt/SrBi2Ta2O9/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.

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confidence: 99%