A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane

Bootsma, G.A.; Gassen, H.J.

doi:10.1016/0022-0248(71)90188-6

Cited by 225 publications

(155 citation statements)

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“…Steps (i) and (iii) are believed to be key steps in determining the nanowire growth rate. [16][17][18] Manipulation of the rate determining steps therefore allows the velocity at which nanowires grow to be controlled. To date, research on modifying the growth kinetics of semiconductor nanowires has focused on influencing the concentration of the growth species in the vapor phase, by using high temperatures to induce faster cracking of precursors 19 or by using precursors with higher catalytic decomposition rates.…”

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confidence: 99%

Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

et al. 2013

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confidence: 99%

Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

et al. 2013

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“…The commonality being that there are three phases and the VLS mechanism is used as a basis to say that the existence of three phases is sufficient explanation of the growth mechanism. Some examples are the vapor-solid-solid (VSS), [28-30] vapor-adsorption layersolid (VAdS), [28] solid-liquid-solid (SLS), solution-liquid-solid (SLS) and supercritical-fluid-solid or liquid-solid (SFSS or SFLS) growth processes, [31,32]. The VLS growth mechanism is therefore examined in order to reveal the atomistic processes involved in crystal growth in a three-phase system.…”

Section: Open Accessmentioning

confidence: 99%

Controlled Crystal-Growth and Structures of Silicon Nanowires for smart applications

2017

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Abstract:One-dimensional nanostructures such as semiconductor nanowires (NWs) are attractive building blocks due to their promising physical properties and potential as active materials in future electronic and optoelectronic applications. The Crystal growth of nanowires occurs mainly at the interfaces between the growing crystals and the supply media. This article reports on the silicon nanowires grown using a vapor-liquid-solid (VLS) concept. One of the key advantages and the beauty of VLS is that controlled placement or templating of the seed metal produces consequently templated NW growth. This templating is highly required for direct integration of NWs into nanodevices for various smart applications, including sensors, actuators, thermoelectricity generation and photovoltaics. We discuss the major questions related to the discovery of fundamentally new phenomena versus performance benchmarking for many of the Si-NWs applications. Finally we attempt to look into the future and discuss our opinion regarding the upcoming trends in NW research.

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“…Several methods have been used to prepare Si nanowires, including chemical vapor deposition [8][9], solution phase synthesis [10], lithography related etching methods [11], photolithography techniques [12][13][14], and scanning tunneling microscopy [15][16]. The vapor-liquid-solid (VLS) method that uses gold (Au) as a catalyst is one of the most prevalent approaches to Si nanowire synthesis [17][18][19][20]. In the VLS reaction, metal particles, such as Au particles on the Si substrate, are generally used as a mediating solvent.…”

Section: Intoroductionmentioning

confidence: 99%