A quantitative study of vacancy defects in quenched platinum by field ion microscopy and electrical resistivity—I. Experimental results

Berger, Arnold S.; Seidman, David N.; Balluffi, R. W.

doi:10.1016/0001-6160(73)90055-2

Cited by 52 publications

(7 citation statements)

References 32 publications

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“…Field-ion-based techniques were initially developed for studying surfaces 1,2 : The field ion microscope (FIM) reveals the structure of a material with atomic-scale resolution 3 , at least in some parts of the image, while the implementation of a time-of-flight spectrometer onto a field ion microscope, which is the atom probe, targeted the elemental identification of atoms images at the surface 4 . The level of detail of the intimate structure of crystalline defects, being grain boundaries 5 or dislocations 6 , brought by FIM was astonishing, and the technique is unrivalled when it comes to observing individual vacancies 7,8 . FIM provides three-dimensional information: the two-dimensions are provided by the projected image of the surface formed by the ionisation of the imaging gas atoms, while the third dimension arises from the possibility to sequentially remove atoms from the specimen itself by field evaporation [8][9][10][11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

Interfaces and defect composition at the near-atomic scale through atom probe tomography investigations

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Interfaces and defect composition at the near-atomic scale through atom probe tomography investigations

et al. 2018

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“…To determine themjn values of the pulsed-field-evaporated ions the voltage on the specimen is measured by an analogue-todigital ( A D ) converter and the TOFS of the ions are measured by a digital timer (Berger 1973). The TOF and voltage data are sent to the computer which calculates the mass-to-charge ratios min from the equation (Panitz et a1 1969) (1) where e is the charge of the electron, VDC is the steady state imaging voltage, Vpulse is the evaporation pulse voltage, 01 is the so called pulse factor, d is the flight distance and t -to is the actual TOF of the ion.…”

Section: Time-of-bight Mass Spectrometermentioning

confidence: 99%

“…The digital, timer that we have constructed can measure TOFS as long as 99-00 p of up to eight consecutive field-evaporated ionst with an accuracy of 0.01 ps. The basic features of this timer have been described in an earlier paper (Berger 1973). The version presently being used has a number of modifications which were introduced to improve the accuracy and reliability of the timer, the principal modification being that t The capability of measuring the TOFS of up to eight ions has proved useful particularly when examining crystallographic regions in which it is difficult to prevent several ions from fieldevaporating due to a single evaporation pulse.…”

Section: Digital Timermentioning

confidence: 99%

A computer-controlled time-of-flight atom-probe field-ion microscope for the study of defects in metals

Hall

Wagner

Seidman

1977

J. Phys. E: Sci. Instrum.

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A time-of-flight (TOF) atom-probe field-ion microscope (FIM) specifically designed for the study of defects in metals is described. This atom probe features (i) a variable-magnification internal image-intensification system based on a channel electron multiplier array for viewing the FIM image; (ii) a liquid-helium-cooled goniometer stage which allows the specimen to be maintained at a temperature anywhere in the range 13-450 K ; (iii) a low-energy (< 3 keV) gas ion gun for in situ irradiations; (iv) an ultrahigh-vacuum (about 4 x 10-8 Pa) chamber to minimize specimen contamination; (v) a high-vacuum (about 1.33 x lO-4Pa) specimen-exchange device; (vi) a Chevron ion detector; and (vii) an eight-channel digital timer with evaporated ions. the specimen, measuring the DC and pulse voltages and analysing the TOF data is controlled by a Nova 1220 computer. Data in the form of a histogram of the number of events plotted against the mass-to-charge ratio are displayed on a Tektronix graphics terminal. An extensive set of computer programs to test and operate the atomprobe FIM has also been developed. With this automated system we can record and analyse 600 TOF min-I. The instrument can clearly resolve the seven isotopes of molybdenum and the five isotopes of tungsten. Investigations of alloys have shown that the concentration of rhenium in a W-25 at. % Re alloy. and the concentrations of titanium and zirconium in MO-1.0 at.% Ti and MO-1.0 at.% Ti-0.08 at. % Zr alloys can be easily measured. Investigations of a low-swelling stainless steel alloy (LSlA) and a metallic glass alloy (Metglass 2826) have shown that all constituents present at a level of 0.05 at. % or higher can be readily determined. 10 ns resolution for measuring the TOFS of the pulsed-field-The entire process of applying the evaporation pulse to

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“…it is possible to examine the bulk of the specimen and to reconstruct in three dimensions the correspondence between specific microstructural features and the local chemical composition. More specifically the atom-probe FIM is capable of imaging lattice defects such as vacancies [11,12], selfinterstitial atoms (SIAs) [15], dislocations [l6], grain boundaries [17] and voids [l8] and it can also chemically identify both substitutional and interstitial alloying elements or impurity atoms.…”

Section: Introductionmentioning

confidence: 99%

An atom-probe field-ion microscope for the study of the interaction of impurity atoms or alloying elements with defects

Wagner¹,

Hall²,

Seidman³

1978

Journal of Nuclear Materials

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A time-of-flight (TOF) atom-probe field-ion microscope (FIM) designed for the study of defects is described. This atom probe features: (l) a variable magnification internal-image-intensification system; (2) a liquid-helium goniometer stage; (3) a lowenergy (£3 keV) gas-ion gun for in-situ irradiations; (h) an ultra-high vacuum (~3-10 torr) chamber; (5) a high vacuum (-10 torr) specimen-exchange device; (6) a Chevron ion detector; and (7) an eight-channel digital timer with a ±10 nsec resolution for measuring the TOFs. The entire process of applying the evaporation pulse to the specimen, measuring the voltages, and analyzing the TOF data is controlled by a computer. With this system we can record and analyze 600 TOF/min. Results on unirradiated specimens of molybdenum, tungsten, W/25 &t% Re, Mo/l.O &t% Ti, Mo/l.O at% Ti/0.08 &t% Zr and a special low swelling stainless steel alloy (LS1A) demonstrate the instrument's ability to quantitatively determine concentrations at the 5*10 at fr level and to determine their spatial distribution with a resolution of a few angstroms.

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A quantitative study of vacancy defects in quenched platinum by field ion microscopy and electrical resistivity—I. Experimental results

Cited by 52 publications

References 32 publications

Interfaces and defect composition at the near-atomic scale through atom probe tomography investigations

Interfaces and defect composition at the near-atomic scale through atom probe tomography investigations

A computer-controlled time-of-flight atom-probe field-ion microscope for the study of defects in metals

An atom-probe field-ion microscope for the study of the interaction of impurity atoms or alloying elements with defects

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