The diffusivity of 3 He atoms in perfect crystals of tungsten has been studied employing the atomprobe field-ion microscope (FIM) technique. Tungsten FIM specimens were implanted in situ with 300-eV 3He+ ions, to a fluence of 3 X lOIS ions cm -2, at specimen temperatures which ranged from 60 to 110 K. The 3He + ion beam was analyzed magnetically and the ion source was connected to the atom probe through a differentially pumped aperture. At an implantation energy of 300 eV no radiation damage was produced by the implanted 3He atoms. Thus, the state of a tungsten specimen after an implantation consisted of 3 He atoms with an initial depth distribution that was determined solely by the range profile of the low-energy ions. Isothermal annealing experiments between 90 and 110 K were employed to study the kinetics of recovery of the implanted 3He atoms; at 60 K the 3He atoms are immobile. This data, in combination with a suitable diffusion model, was used to determine-for the first time-the diffusivity [D'He (T)] and the enthalpy change of migration of 3 He atoms (.::1h ~e ) in tungsten. The quantity D'He(T) is given by the Arrhenius expression: D'He(T) = (5.4 ± ~086)x 10-3 exp( -0.28 eV /kT}cm2 S-I.The value of.::1h ~e is approximately the same as for.::1h ~e (0.24--0.32 eV). D'He (T) is compared with the diffusivity values of IH and self-interstitial atoms in tungsten-the self-interstitial atoms are considerably more mobile than 3He or 4He atoms at the same temperature, as are the IH atoms.