1978
DOI: 10.1016/0022-3115(78)90257-x
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An atom-probe field-ion microscope for the study of the interaction of impurity atoms or alloying elements with defects

Abstract: A time-of-flight (TOF) atom-probe field-ion microscope (FIM) designed for the study of defects is described. This atom probe features: (l) a variable magnification internal-image-intensification system; (2) a liquid-helium goniometer stage; (3) a lowenergy (£3 keV) gas-ion gun for in-situ irradiations; (h) an ultra-high vacuum (~3-10 torr) chamber; (5) a high vacuum (-10 torr) specimen-exchange device; (6) a Chevron ion detector; and (7) an eight-channel digital timer with a ±10 nsec resolution for measuring t… Show more

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Cited by 22 publications
(4 citation statements)
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References 21 publications
(8 reference statements)
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“…However, the quantitative experimental picture concerning the diffusive behavior of helim atoms-in the absence of radiation damage-is much poorer. 18 From a combination of isothermal annealing experiments at several implantation temperatures, in conjunction with a suitable diffusion model, we have determined-for the first time-the ditfusivity [D'He (T)] and the enthalpy change of migration of 3He atoms (. At Cornell we have established that for 300and 475-eV 4He+ implantations in tungsten the 4He atoms are located in the interstices of the lattice and are immobile at 60, 61, 80, and 90 K-while they are highly mobile at 110 K. 15 Employing a first-order diffusion model a value of the enthalpy change of migration of 4 He (.…”
Section: Introductionmentioning
confidence: 99%
“…However, the quantitative experimental picture concerning the diffusive behavior of helim atoms-in the absence of radiation damage-is much poorer. 18 From a combination of isothermal annealing experiments at several implantation temperatures, in conjunction with a suitable diffusion model, we have determined-for the first time-the ditfusivity [D'He (T)] and the enthalpy change of migration of 3He atoms (. At Cornell we have established that for 300and 475-eV 4He+ implantations in tungsten the 4He atoms are located in the interstices of the lattice and are immobile at 60, 61, 80, and 90 K-while they are highly mobile at 110 K. 15 Employing a first-order diffusion model a value of the enthalpy change of migration of 4 He (.…”
Section: Introductionmentioning
confidence: 99%
“…The alloy specimen was examined in our atom-probe FIM; this instrument has been described in some detail in earlier publications [20][21][22][23][24] and hence we only discuss a few important aspects of it in this paper. The atom-probe Table 1) the Ti concentration is 0.37 ± 0.06 at%.…”
Section: Methodsmentioning
confidence: 99%
“…The FIM image is observed with the aid of an internal image-intensification system which contains a 3 mm diameter probe hole at its center; seeFig. 1in Ref [23]…”
mentioning
confidence: 99%
“…This situation changed radically and permanently with the interfacing of an APFIM at Cornell University to a Data General Nova computer with 8 K of discrete memory in 1975. [41][42][43] The APFIM is a revolutionary instrument because it combines atomicresolution FIM images with TOF mass spectrometry. It has been applied to a wide range of problems in materials science and engineering that cannot be studied by any other technique.…”
mentioning
confidence: 99%