A Q-Band MHEMT 100-mW MMIC power amplifier with 46 % power-added efficiency

Niehenke, Edward C.; Whelehan, J.; Xu, Dong-Hui; Meharry, D. E.; Duh, K.H.G.; Smith, P.M.

doi:10.1109/mwsym.2008.4633157

Cited by 3 publications

(1 citation statement)

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“…However, it is not well suited for high power amplifier due to its low breakdown voltage, which limits the sustainable voltage swing and thus the output power. There have been many researches on the design of high power amplifiers using mHEMT technologies [4–8]. However, the reported maximum output power of mHEMT power amplifiers was less than 0.5 W [4].…”

Section: Introductionmentioning

confidence: 99%

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

Park¹,

Kim²,

Koh³

et al. 2012

Micro & Optical Tech Letters

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A broadband watt‐level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K‐band. The quadruple‐stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt‐level output powers. The fabricated power amplifier using 130‐nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3‐dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt‐level single‐chip power amplifiers in mHEMT technology. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2624–2626, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27140

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Section: Introductionmentioning

confidence: 99%