“…Atomic steps on the Si(001) surface serve as a major source of defects. A step separates terraces with mutually orthogonal Si dimer rows, which translates into 2 types of structural domains in the reconstructions: n × 1 and its rotated by 90°counterpart 1 × n. 31,33 Figure 2g reveals the distance between the Eu spots in the 2 × 1 orientation to be twice as large as that in the 1 × 2 orientation of EuSi 2 ; the brightness of the spots reflects the atomic density in the projected Eu rows. A similar two-domain structure shows up in HAADF-STEM images of Eu 3 Si 5 (Supplementary Figure 2).…”
Section: Resultsmentioning
confidence: 99%
“…The most studied sub-ML superstructures on Si are perhaps those of Sr, enabling epitaxial integration of oxides with Si(001). , However, Sr superstructures are nonmagnetic. As a rule, Eu compounds are isostructural to their Sr counterparts; − their properties however are rather different because of inherent magnetism of Eu ions. Eu and Sr materials thus make ideal pairs for comparative studies on magnetism.…”
Intrinsic two-dimensional (2D) magnetism has been demonstrated in various materials scaled down to a single monolayer. However, the question is whether 2D magnetism extends beyond the monolayer limit, to chemical species formed by sparse but regular 2D arrays of magnetic atoms.Here we show that sub-monolayer superstructures of Eu atoms self-assembled on the silicon surface exhibit strong magnetic signals. Robust easy-plane magnetism is discovered in both one-and two-dimensionally ordered structures with Eu coverage of half monolayer and above. The emergence of 2D magnetism manifests itself by a strong dependence of the effective transition temperature on weak magnetic fields. The results constitute a versatile platform for miniaturization of 2D magnetic systems and seed an expandable class of atomically thin magnets for applications in information technologies.
“…Atomic steps on the Si(001) surface serve as a major source of defects. A step separates terraces with mutually orthogonal Si dimer rows, which translates into 2 types of structural domains in the reconstructions: n × 1 and its rotated by 90°counterpart 1 × n. 31,33 Figure 2g reveals the distance between the Eu spots in the 2 × 1 orientation to be twice as large as that in the 1 × 2 orientation of EuSi 2 ; the brightness of the spots reflects the atomic density in the projected Eu rows. A similar two-domain structure shows up in HAADF-STEM images of Eu 3 Si 5 (Supplementary Figure 2).…”
Section: Resultsmentioning
confidence: 99%
“…The most studied sub-ML superstructures on Si are perhaps those of Sr, enabling epitaxial integration of oxides with Si(001). , However, Sr superstructures are nonmagnetic. As a rule, Eu compounds are isostructural to their Sr counterparts; − their properties however are rather different because of inherent magnetism of Eu ions. Eu and Sr materials thus make ideal pairs for comparative studies on magnetism.…”
Intrinsic two-dimensional (2D) magnetism has been demonstrated in various materials scaled down to a single monolayer. However, the question is whether 2D magnetism extends beyond the monolayer limit, to chemical species formed by sparse but regular 2D arrays of magnetic atoms.Here we show that sub-monolayer superstructures of Eu atoms self-assembled on the silicon surface exhibit strong magnetic signals. Robust easy-plane magnetism is discovered in both one-and two-dimensionally ordered structures with Eu coverage of half monolayer and above. The emergence of 2D magnetism manifests itself by a strong dependence of the effective transition temperature on weak magnetic fields. The results constitute a versatile platform for miniaturization of 2D magnetic systems and seed an expandable class of atomically thin magnets for applications in information technologies.
“…[ 31 ] The conditions are strictly the same; the only difference is the intermediate step of forming the 1 × 2 Eu/Si(001) reconstruction, present in the blue route but absent in the red route. The structure and stoichiometry (1/2 monolayer) of the passivating Eu reconstruction have been studied by diffraction and microscopy techniques; [ 31–33 ] this reconstruction is isostructural to 1 × 2 Sr/Si(001), [ 33 ] a template commonly employed for synthesis of oxides on Si. [ 5–11 ] The formation of 1 × 2 Eu/Si(001) is ensured by the substrate temperature, metal flux, and deposition time.…”
Integration of oxides with silicon fuses advanced functional properties with a mature technological platform. In particular, direct EuO/Si contact holds high promise for spintronics but requires single‐crystalline epitaxial films with atomically sharp interfaces. The standard approach employing regular 2D superstructures of metal atoms on the Si surface fails to meet the challenge. Here, an alternative route is designed and shown to solve the problem. This route avoids regular templates; the chaotic 2D distribution of metal atoms on the Si surface prevents stabilization of unwanted crystal orientations. Thus, the disordered submonolayer phase at the interface promotes order in oxide/Si coupling, as witnessed by a combination of diffraction techniques and high‐resolution electron microscopy. The results not only mark tangible progress in manufacturing EuO/Si contacts but also provide a general framework for monolithic integration of functional oxides with semiconductor substrates.
“… 15 These special features have opened prospects for the fabrication of optoelectronic and spintronic devices based on EuO, which would be compatible with the current CMOS semiconductor technology. 16 However, most of these attractive properties have been studied in high-quality monocrystalline EuO thin films, 17 which is difficult and costly to prepare. 18 In this context, there has been insufficient research related to the study of the magnetic and optical properties of nanocrystalline and nanodimensional EuO and might have new and unexpected properties.…”
The
development of broadband and ultracompact optoelectronic devices
relies on the possibility of fabricating bright and tunable emitters
at the nanoscale. Here, we show emission from EuO
x
(1 ≤
x
< 1.4) thin films on
silicon formed by nanocrystals with average sizes in the range of
5 nm. The photoluminescence emission of the nano-EuO
x
films is tunable as a function of the oxygen concentration
changing from a green broadband Eu
2+
-related emission to
a narrow red Eu
3+
-related emission. To reach these results
has been instrumental through the use of a new methodology specially
designed to achieve high-quality europium oxide films whose compositional
properties are controlled by the growth base pressure and preserved
thanks to a chemically stable and transparent cover layer of Al
2
O
3
. Our findings confirm the outstanding potential
of nanostructured EuO
x
films as “one-compound”
optical elements with tunable emission properties for their implementation
in integrated silicon-based devices.
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