Fluidic self-assembly (FSA) using molten metal bumps is one of the most promising heterogeneous integration (HI) technologies, which enable us to integrate devices made of various materials on various substrates. We can fabricate the metal bumps using Ga having diameters of 24, 18, 12, and 8 µm with good yield. Using Ga has significant advantages; especially, it includes no toxic metals. These bumps were used for the FSA process of the metal dummy blocks having a diameter of 18 µm, and a good yield of 84% was obtained all over the substrate of about 1×1 cm2. Finally, we applied this method to the resonant tunneling diode (RTD) to verify good electrical, mechanical, and thermal contacts. The RTD device blocks having a diameter of 24 µm have been successfully assembled using the molten Ga bumps. This method is promising for high-performance RTD integration.