A profound analysis of structural, thermal, optical, and electrical properties of Cd50Pb30S20 composition for optoelectronic devices: implications of changes in film’s thickness

Alqahtani, Abdulaziz Saeed; Alrafai, H. A.; Al-Dossari, M.; Shaaban, E.R.; Qasem, Ammar

doi:10.1007/s11082-022-04222-5

Cited by 8 publications

(7 citation statements)

References 75 publications

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“…R s = 4.53.V/I [Ω/sq], where V is the voltage in volts, I is the current in amperes, and the number 4.53 is the correction constant, is the equation used to calculate sheet resistance [ 32 , 33 ]. In accordance with the equation ρ = R s d , the relationship between resistivity (measured in ohm cm) and R s is accurate if the film thickness is d [ 34 ]. As the Gd content increases, the resistivity decreases, as shown in Figure 12 .…”

Section: Resultsmentioning

confidence: 99%

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

et al. 2023

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After (In1−xGdx)2O3 powder with a wide x range of 0 to 10 at.% was chemically produced, (In1−xGdx)2O3 thin films were evaporated under ultra-vacuum using an electron beam apparatus. We investigated the influence of the Gd doping concentration on the magnetic, optical, electrical, and structural properties of the resultant In2O3 deposits. The produced Gd-doped In2O3 films have a cubic In2O3 structure without a secondary phase, as shown by the X-ray diffraction results. Additionally, the chemical analysis revealed that the films are nearly stoichiometric. A three-layer model reproduced the spectroscopic ellipsometer readings to determine the optical parameters and energy gap. The Egopt changed toward the lower wavelength with growing the Gd doping in (In1−xGdx)2O3 films. The Egopt in the (In1−xGdx)2O3 films was observed to increase from 3.22 to 3.45 eV when the Gd concentration climbed. Both carrier concentration and hall mobility were found during the Hall effect studies. It was possible to construct the heterojunction of Ni (Al)/n-(In1−xGdx)2O3/p-Si/Al. At voltages between −2 and 2 volts, investigations into the dark (cutting-edge-voltage) characteristics of the produced heterojunctions were made. The oxygen vacancies and cationic defects in the lattice caused by the uncompensated cationic charges resulted in significant magnetism and ferromagnetic behavior in the undoped In2O3 films. The (In1−xGdx)2O3 films, however, displayed faint ferromagnetism. The ferromagnetism seen in the (In1−xGdx)2O3 films was caused by oxygen vacancies formed during the vacuum film production process. Metal cations created ferromagnetic exchange interactions by snatching free electrons in oxygen.

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Section: Resultsmentioning

confidence: 99%

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

et al. 2023

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“…The Tauc formula relates the absorption coefficient (α) of a material to the incident photon energy (hv) through the indirect optical bandgap energy (E g ). The equation is illustrated as follows [33][34][35]:…”

Section: Optical Energiesmentioning

confidence: 99%

“…Additionally, the reduction in the band gap has implications for the electrical conductivity of the glass. A diminished band gap makes the material more advantageous for electronic and optoelectronic devices, as well as applications in batteries [34,38,39]. This broadens the potential applications of glass in these fields and underscores its adaptability in various technologies that rely on efficient energy capture and transmission.…”

Section: Optical Energiesmentioning

confidence: 99%

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Ramifications of chromium-to-bismuth ions substitution on the structural and optical characteristics of bismuth borate glasses for optoelectronic applications

Moustafa,

Mokhtar,

Abdelwahed

et al. 2024

Phys. Scr.

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The exploration of optoelectronic materials with distinctive properties is still ongoing. To this end, a series of quaternary glassy materials of the composition 15Na2O–65B2O3–(20–x)Bi2O3–xCr2O3, denoted as NBBC, is synthesized using the melt quenching method, where x = 0.0, 2.0, 4.0, 6.0, 8.0, and 10.0 mol%. X-ray diffraction (XRD) confirms that the glasses under investigation are amorphous, except for the sample with a molar ratio of 10% Cr2O3, which showed a polycrystalline structure. FTIR analysis of the NBBC glasses reveals structural changes affecting Bi-O and B-O vibrations, suggesting a correlation between composition and optical properties. Interestingly, the bandgap energy of the NBBC glasses, determined optically, demonstrates a reduction from 2.881 eV to 1.941 eV with increasing Cr2O3 content. Conversely, the tail energy exhibits an opposite trend. The observed reduction in the bandgap with increasing Cr-ions is attributed to the introduction of chromium in the glassy matrix which changes the electronic structure and enhances the light absorption efficiency. Furthermore, various optical parameters are calculated, such as the optical constants, dielectric constants, loss energy, the density of coverage, sheet resistance, the figure of merit factor, and dispersion parameters. Notably, all of these parameters demonstrate a remarkable sensitivity to the gradual increment of chromium ions. These findings imply that the NBBC glasses could be appropriate for optoelectronic purposes.

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“…In fact, when the recombination speed increases, the diode acts like a resistor, hindering the flow and passage of current [32][33][34][35][36]. The integration and interdependence in the properties of chalcogenide compounds, or those that contain at least a chalcogen element, or that are based in their synthesis on silicon and transitional elements, were received extensive studies, as the optical and electrical properties have been employed to determine the suitability of these systems for photovoltaic applications, especially for various uses in solar cells [37][38][39][40][41][42], optoelectronics [43][44][45][46][47][48][49][50][51][52][53][54][55][56], and electrodes [57][58][59][60]. Based on these studies, our current study was a link between the theoretical and experimental parts of the different system compositions of the studied solar cells.…”

Section: (I-v) and (P-v) Data As A Function Of The Solar Irradiance ψmentioning

confidence: 99%

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

Hassan¹,

Al‐nami²,

Alrafai³

et al. 2023

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The characteristics of a single solar cell made by CdS thin film deposition on a silicon glass substrate were estimated using simulation models in this study. An aluminum electrode was attached to a silicon wafer to produce a heterojunction, and the indium fingers were fashioned into another electrode and connected directly to the CdS layer. Simulation steps were performed using PV*SOL 3.0 software package and bias points (ISC, VOC ) models. In addition to the use of advanced programs such as MATLAB software (Shell SQ150 PV module), Mathcad 2000 program, and Origin Lab 2019 program.Simulation programs for extracting photovoltaic parameters have been executed together with the laboratory procedures. The simulation programs and experimental procedures aimed in general to know the (current-voltage) and (power-voltage) characteristics of the studied single-diode photovoltaic.

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A profound analysis of structural, thermal, optical, and electrical properties of Cd50Pb30S20 composition for optoelectronic devices: implications of changes in film’s thickness

Cited by 8 publications

References 75 publications

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

Ramifications of chromium-to-bismuth ions substitution on the structural and optical characteristics of bismuth borate glasses for optoelectronic applications

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

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