A process model of wafer thinning by diamond grinding

Chen, Chao‐Chang A.; Hsu, Li-Sheng

doi:10.1016/j.jmatprotec.2007.11.243

Cited by 32 publications

(9 citation statements)

References 6 publications

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“…A kinematical analysis is useful to address the behavior of each grain in wafer surface generation (Zhou, et al, 2002, 2003, Chen and Hsu, 2006, 2008. The 3D model of rotational in-feed grinding method is shown in Fig.…”

Section: Kinematical Analyses 31 3d Cutting Path and Resultant Wafermentioning

confidence: 99%

Process study on large-size silicon wafer grinding by using a small-diameter wheel

Ebina

Yoshimatsu

Zhou

et al. 2015

JAMDSM

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Silicon (Si) is a fundamental material in the semiconductor industry. The advancement of semiconductor devices have offered convenience and comfort to our life. In order to raise productivity and economic efficiency, the semiconductor industry keeps looking for use of larger size Si wafers. The next generation wafer is expected to be sized as large as 450 mm in diameter. Many wafering processes including lapping, grinding and polishing have been studied and grinding technology stands out as the most promising process for large-size Si wafer manufacturing. In the current in-feed grinding scheme adopted for Si wafers, the wheel diameter used is generally equal to or larger than the wafer diameter. In turn, larger diameter wheels require larger size machine tools and production lines, which lead to increase in manufacturing costs. In this paper, both experiment and kinematical analysis have been carried out to investigate the feasibility of using small diameter grinding wheels to grind large size Si wafers, mainly focusing on the effects of wheel diameter on wafer geometry and surface roughness. The results show that both wheels generated a central convex profile on the wafer and the small wheel achieved a slightly better flatness than the large wheel. The surface roughness were similar one to another for most area of the wafer except the fringe around its edge. All these experimental results were predicable by the kinematic model established in this paper. Particularly, the kinematic analysis found that the cutting path made by small wheel with diameter equaling to the wafer radius was parallel each other at the fringe around wafer edge, which directly worsened the surface roughness.

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Section: Kinematical Analyses 31 3d Cutting Path and Resultant Wafermentioning

confidence: 99%

Process study on large-size silicon wafer grinding by using a small-diameter wheel

Ebina

Yoshimatsu

Zhou

et al. 2015

JAMDSM

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“…The coordinate of arc OM in the O(XYZ) coordinate system needs to be obtained when the posture of the spindle is adjusted to control the TTV features. The homogeneous matrix method effectively describes the coordinate transformation between O(XYZ) and O 0 (X 0 Y 0 Z 0 ) [30]. The position coordinate of the point on arc OM is denoted as (x 0 , y 0 , z 0 ) in O 0 (X 0 Y 0 Z 0 ).…”

Section: The Mathematical Model For Ground Wafer Surface Shapementioning

confidence: 99%

An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process

et al. 2022

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The wafer backside grinding process has been a crucial technology to realize multi-layer stacking and chip performance improvement in the three dimension integrated circuits (3D IC) manufacturing. The total thickness variation (TTV) control is the bottleneck in the advanced process. However, the quantitative analysis theory model and adjustment strategy for TTV control are not currently available. This paper developed a comprehensive simulation model based on the optimized grinding tool configuration, and several typical TTV shapes were obtained. The relationship between the TTV feature components and the spindle posture was established. The linear superposition effect of TTV feature components and a new formation mechanism of TTV shape were revealed. It illustrated that the couple variation between the two TTV feature components could not be eliminated completely. To achieve the desired wafer thickness uniformity through a concise spindle posture adjustment operation, an effective strategy for TTV control was proposed. The experiments on TTV optimization were carried out, through which the developed model and TTV control strategy were verified to play a significant role in wafer thickness uniformity improvement. This work revealed a new insight into the fine control method to the TTV optimization, and provided a guidance for high-end grinding tool and advanced thinning process development.

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“…Then the adjustment of the wafer surface shape, the impact of the shape of chuck on the grinding marks, and generation mechanisms of central bumps on ground wafers were studied. Chen and Hsu 9 established the mathematical model of the surface profile of chuck, the surface profile of ground wafer, and TTV in BG. They also studied the effect of the angles of the grinding wheel on the shape of chuck and wafer.…”

Section: Introductionmentioning

confidence: 99%

The effect of the chuck shape on the wafer topography in back grinding of wafer with outer rim

Zhu

Yao

Guo

et al. 2021

Advances in Mechanical Engineering

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Back Grinding of Wafer with Outer Rim (BGWOR) is a novel method for carrier-less thinning of silicon wafers. Silicon wafers are widely used in integrated circuits (ICs). The topography of the wafer will not only directly affect the efficiency of subsequent processing of semiconductor devices, but correspondingly affect the performance and life of these devices. However, there are few studies on the shape of the ground wafer in BGWOR. In this paper, the mathematical model of the wafer topography in BGWOR was developed. With this model, the radial thickness and total thickness variation (TTV) of a wafer under different parameters, including inclination angles and radii of grinding wheel for dressing chuck, were simulated by MATLAB. Inclination angles and radii of grinding wheels for the dressing chuck had a great influence on the radial thickness and TTV of a wafer in the BGWOR. Lastly, the pilot experiments were conducted to validate the theoretical model of grinding topography and TTV of the wafer in BGWOR. To enhance the flatness of the ground wafer, it is essential to control the shape of the dressing chuck. The research results are helpful to the optimization of the dressing process of the chuck in the BGWOR.

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A process model of wafer thinning by diamond grinding

Cited by 32 publications

References 6 publications

Process study on large-size silicon wafer grinding by using a small-diameter wheel

Process study on large-size silicon wafer grinding by using a small-diameter wheel

An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process

The effect of the chuck shape on the wafer topography in back grinding of wafer with outer rim

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