A preliminary study on the thermal and mechanical performances of sintered nano-scale silver die-attach technology depending on the substrate metallization

Henaff, François Le; Azzopardi, Stéphane; Delétage, Jean-Yves; Woirgard, Eric; Bontemps, Serge; Joguet, Julien

doi:10.1016/j.microrel.2012.06.121

Cited by 46 publications

(17 citation statements)

References 8 publications

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“…Wereszczak et al (2012) compared the effect of surface topology of substrate and pattern of the printed Ag paste on the quality of the sintered Ag joints, and concluded that both the topological modification to the substrate and the use of a proper pattern of the printed Ag paste could increase the shear strength. Le Henaff et al (2012) tested the thermal cycling reliability of the sintered Ag joints for attaching both Si and SiC dies, and found no appreciable degradation in the thermal resistance, impedance and cross-sections analyses after 2400 thermal cycles between −40 • C and 125 • C. Kraft et al (2012) tested the power cycling reliability of Si diode samples with top and bottom side Ag sintering on direct bonded copper (DBC) substrates, revealing a lifetime 17 times longer than the soldered and wire bonded DBC samples. Li et al (2013) investigated the mechanical and thermo-mechanical properties of the Ag nanoparticle paste sintered lap shear joint by cyclic shear test, and the results obtained can be used to explain and simulate the mechanical and thermo-mechanical response and the time-dependent inelastic strain development within the sintered Ag joints for power die attachment in certain application environments.…”

Section: Introductionmentioning

confidence: 99%

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles

Johnson

Buttay

et al. 2015

Journal of Materials Processing Technology

100

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a b s t r a c t 3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been attached using sintering of Ag nanoparticle paste on AlN-based direct bonded copper substrates with 5\0.1 m thick NiP\Au finish. The effect of preparation and sintering parameters including time of drying the printed paste, sintering temperature and time, and pressure, on the average shear strength for multiple die attachments was investigated. The surfaces of the die attachments after the shear tests were observed and the individual shear strength values correlated with the "apparent" porosity and thicknesses of the corresponding die attachments (sintered layer). The results obtained are further discussed and compared with typical data reported in existing literature. Main conclusions include: (i) the present shear strength values and their variations are comparable with those reported for single die attachment samples, (ii) the effects of sintering parameters can be ascribed to the effectiveness of the organic content burnout and appropriate rate of growth and coalescence of the Ag nanoparticles during the sintering process, and (iii) thickness values of the sintered Ag die attachments may be taken as nondestructive measurements to monitor/evaluate the quality of die attachment during power electronic module manufacturing/assembly process.

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Section: Introductionmentioning

confidence: 99%

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles

Johnson

Buttay

et al. 2015

Journal of Materials Processing Technology

100

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“…These parts have been identified as the metallic ones such as the die attach (where alternatives to lead-based solder are emerging [1,2]), and the source metallization, including the top metal and the bond wires attached to it [3][4][5][6]. The plastic deformation of the source metallization and wire bonds is linked to the difference in the coefficient of thermal expansion (CTE) between the Silicon (Si) chip and the metallic parts.…”

Section: Introductionmentioning

confidence: 99%

In-depth investigation of metallization aging in power MOSFETs

Ruffilli

Berkani

Dupuy³

et al. 2015

Microelectronics Reliability

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The long-term reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Previous studies have shown that the source metallization (top metal and wires) is a failure-prone location of the component. To study how the top Aluminum metallization microstructure ages, we have performed ion and electron microscopy and mapped the grain structure before and after avalanche and short-circuit aging tests. The situation under the bond wires is significantly different as the bonding process induces plastic deformation prior to aging. Ion microscopy seems to show two inverse tendencies: grain growth under the wires and grain refinement elsewhere in the metallization. Transmission electron microscopy shows that the situation is more complex. Rearrangement of the initial defect and grain structure happen below and away from the wire. The most harmful fatigue cracks propagate parallel to the wire/metal bonding interface.

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“…Silver paste sintering is a widely studied ture shows that its properties are more promisin [1][2][3][4][5][6]. on rate in automotive or aeronautics applicat les (figure 1) must be placed in very hot environm cture of a conventional solder based power modu g system design is a major challenge for enginee are expected to be a judicious way of impro g is provided on the both sides of the die.…”

Section: Wire Bonding Dbc Substratementioning

confidence: 99%

Processing and characterization of a 100% low-temperature Ag-sintered three-dimensional structure

Masson¹,

Azzopardi²,

Henaff³

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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Due to RoHS restrictions, researches on lead-free packaging have increased over the past decade. Low Temperature Joining Techniques (such as silver sintering or Ni-Au Transient Liquid Phase Bonding) are particularly studied because they are processed below 300°C and the attaches obtained are reliable at high temperature. Silver paste sintering technique for die backside attach is now a well-known technology used in both industry and academic research.The objective of this work is to adapt the procedure related to conventional silver paste sintered assembly to produce a three-dimensional module. For such purpose, this paper presents some theoretical considerations on silver sintering in order to briefly introduce the technique. Then, sintering procedures for realizing both die backside attach and three-dimensional structure will be described. Experimental results (electrical and mechanical tests, cross-sections, thermal measurements) will be given and performances of the double-side structure will be compared to die backside attaches and with lead-free solder.This work demonstrates for the first time the feasibility of a 100% silver sintered threedimensional module using silicon diodes and Ni-Au substrate. Mechanical properties of the two attach-packages are better than classical solders and the performances of each attach are similar to silver sintered die backside attach.These promising results open the way to the use of silicon devices for high power density assemblies because the dice will be cooled down on both sides. This technology just requires silver metallization on the two sides of the device and can be extended to new materials such SiC or GaN for high temperature applications.

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A preliminary study on the thermal and mechanical performances of sintered nano-scale silver die-attach technology depending on the substrate metallization

Cited by 46 publications

References 8 publications

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles

In-depth investigation of metallization aging in power MOSFETs

Processing and characterization of a 100% low-temperature Ag-sintered three-dimensional structure

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