A pragmatic approach to high sensitivity defect inspection in the presence of mask process variability

Han, Sang Hoon; Park, Jin Hyung; Chung, Dong Hoon; Woo, Sang Uk; Cho, Han Ku; Kim, David; Chen, Chunlin; Park, Ki-Hun; Inderhees, Gregg

doi:10.1117/12.746567

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All these ideas are based on maintaining high sensitivity on main features and giving low sensitivity on SRAFs simultaneously possible. [8] We experimented with two significant illumination modes which are using AI and HR for reducing nuisance defects on SRAFs in D2D mask inspection. Figure 3 shows the optics of AI inspection is similar (to some extent) to the ArF scanner.…”

Section: Experimental Inspection Modesmentioning

confidence: 99%

Study of high sensitivity DUV inspection for sub-20nm devices with complex OPCs

et al. 2014

Self Cite

View full text Add to dashboard Cite

EUV lithography has been delayed due to well-known issues such as source power, debris, pellicle, etc. for high volume manufacturing. For this reason, conventional optical lithography has been developed to cover more generations with various kinds of Resolution Enhancement Techniques (RETs) and new process technology like Multiple Patterning Technology (MPT). Presently, industry lithographers have been adopting two similar techniques of the computational OPC scheme such as Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) [1]. Sub-20 nm node masks including these technologies are very difficult to fabricate due to many small features which are near the limits of mask patterning process. Therefore, these masks require the unseen level of difficulty for inspection. In other words, from the viewpoint of mask inspection, it is very challenging to maintain maximum sensitivities on main features and minimum detection rates on the Sub-Resolution Assist Features (SRAFs). This paper describes the proper technique as the alternative solution to overcome these critical issues with Aerial Imaging (AI) inspection and High Resolution (HR) imaging inspection.

show abstract

Section: Experimental Inspection Modesmentioning

confidence: 99%

Study of high sensitivity DUV inspection for sub-20nm devices with complex OPCs

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…In Die:Database inspections the sensitivity control layer (SCL) algorithm allows the sensitivity to be controlled based on the local spatial regions as specified by a control file [2]. The thin line desense (TLD) feature allows for sub-resolution assist features (SRAFs) to be inspected at reduced sensitivity in multiple inspection modes [3]. For WPI the defect detection sensitivity is automatically focused in the regions with the highest MEEF without the use of feature identifiers than can result in missed defects and which add a setup burden.…”

Section: Foundation Of Wpi: High Resolution Imagingmentioning

confidence: 99%

High resolution inspection with wafer plane die: database defect detection

Hess

Wihl

Shi

et al. 2008

Photomask Technology 2008

View full text Add to dashboard Cite

High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newlydeveloped Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers.This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property.A previous paper [1] introduced WPI in D:D mode. This paper examines the operation and results for WPI in Die:Database mode.

show abstract

A pragmatic approach to high sensitivity defect inspection in the presence of mask process variability

Cited by 2 publications

References 0 publications

Study of high sensitivity DUV inspection for sub-20nm devices with complex OPCs

Study of high sensitivity DUV inspection for sub-20nm devices with complex OPCs

High resolution inspection with wafer plane die: database defect detection

Contact Info

Product

Resources

About