A power BJT model for circuit simulation

Talwalkar, N.; Lauritzen, P.O.; Fatemizadeh, B.; Perlman, David C.; Ma, Chao

doi:10.1109/pesc.1996.548558

Cited by 13 publications

(2 citation statements)

References 8 publications

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“…The discretized regions are then connected one to each other by means of a set of equations derived from the device physics and circuit theory. The Lumped Charge technique was successfully employed for the development of many power device models: diode [4]- [7], SCR [8], GTO [9], MCT [10], MOSFET [11], BJT [12], and the IGBT [13].…”

Section: Introductionmentioning

confidence: 99%

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators

Chimento

Nawaz

Mora

et al. 2013

MSF

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A simplified model for SiC Power diodes has been developed and implemented in Spice simulator in order to get the advantages of a modular and hierarchical structure that can be easily used for modeling of power semiconductor modules. The proposed approach is based on the lumped charge technique. One of the main targets for the proposed model is the implementation of a modeling structure starting from the evaluation and simplification of the semiconductor equations. The paper will show the implementation of the model along with an experimental evaluation of the proposed method.

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Section: Introductionmentioning

confidence: 99%

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators

Chimento

Nawaz

Mora

et al. 2013

MSF

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“…An empirical solution of the diffusion equation is presented by Xu and Schroder [2] to describe the static and dynamic behavior. Recently, a power BJT model using lumped charge method was proposed by Talwalkar et al [3].…”

Section: Fig 1 Power Bjt Performance In Ballastmentioning

confidence: 99%

Improved capacitance model for power bipolar transistor turn-off performance

Trivedi

Vijayalakshmi²,

Shenai³

et al.

PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196)

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I IHigh voltage bipolar transistors are widely employed in many power supplies and most self-oscillating electronic ballasts for voltage applications upto 600 V. At the time of turn-off, these devices show significant storage time and fall time. This paper presents a new model to predict the fall time performance of power bipolar transistors. This is achieved by redefining the effective depletion capacitance to account for stored charge in the drift region of a power bipolar transistor in high level injection. The authenticity of the model is tested under various hard and soft switching load conditions. The model will be enable better simulation of bipolar transistor turn-off characteristics in applications such as electronic lamp ballasts.

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Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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A power BJT model for circuit simulation

Cited by 13 publications

References 8 publications

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators

Improved capacitance model for power bipolar transistor turn-off performance

Status and trends of power semiconductor device models for circuit simulation

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