A plasma assisted in situ restoration process for sidewall damaged ULK dielectrics

Koehler, N.; Fischer, Tobias; Zimmermann, Sven; Schulz, Stefan E.

doi:10.1016/j.mee.2016.01.001

Cited by 5 publications

(8 citation statements)

References 14 publications

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“…With the replacement of cross‐linkages with bond‐terminal groups, the coordination number decreases. In hydrogenated SiOC, the critical coordination is 2.4 at a minimum under pore interconnectivity, as determined using percolation theory . This means that H incorporation affects in SiC and SiO:H films .…”

Section: Challengesmentioning

confidence: 96%

“…The curing of the graft PS via a reaction of Benzocyclobutene resulted in polycarbosilane‐modified styrene resins. Koehler et al proposed an in situ restoration process to repair damaged porous low‐k materials by downstream plasma‐assisted OMCTS and bis(dimethylamino)dimethylsilane.…”

Section: Process Optimizations and Improvementsmentioning

confidence: 99%

“…The low‐k film was deposited using co‐oligomers of tricyclo[6.2.0.03,6]deca‐1(8),2,6‐triene and divinylbenzene . For amorphous SiC films, material properties have been analyzed using bond constraint and percolation theory, as reported by King et al Bond constraint theory can be used to determine chemical bond coordination: For instance, SiC is represented by four‐fold coordination. With the replacement of cross‐linkages with bond‐terminal groups, the coordination number decreases.…”

Section: Challengesmentioning

confidence: 99%

“…This means that H incorporation affects in SiC and SiO:H films . The coordination and interconnectivity parameters can be used for the prediction of the mechanical properties of films . Bhattarai et al recently reported that the mean atomic coordination, < r >, determines the Young's modulus of SiOCH films, E , expressed as

E \propto {(italicr > - true〈 < r >_{normalc} true〉)}^{3 / 2}

, where < r > c is the critical coordination of 2.4 for hydrogenated group IV materials, such as SiOCH, and 4.0 for SiC and SiO 2 .…”

Section: Challengesmentioning

confidence: 99%

See 3 more Smart Citations

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Miyajima

Ishikawa

Sekine

et al. 2019

Plasma Processes & Polymers

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The developments in advanced interconnect technology for semiconductor logic devices for the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials, including fluorosilicate glass and carbon‐doped silicon oxide is reviewed. The chemical bond structures of low‐k materials are summarized to help mitigate the k value degradation caused by moisture uptake after plasma processes. Damage suppression is accomplished by integrating deposition chemistries, pattern etch transfer, and post‐etch cleaning technologies. On the basis of analyses results, a discussion on the bond engineering of low‐k materials and their degradation during plasma processing is given. Challenges facing low‐k interconnect technology are also addressed.

show abstract

Section: Challengesmentioning

confidence: 96%

Section: Process Optimizations and Improvementsmentioning

confidence: 99%

Section: Challengesmentioning

confidence: 99%

E \propto {(italicr > - true〈 < r >_{normalc} true〉)}^{3 / 2}

, where < r > c is the critical coordination of 2.4 for hydrogenated group IV materials, such as SiOCH, and 4.0 for SiC and SiO 2 .…”

Section: Challengesmentioning

confidence: 99%

See 2 more Smart Citations

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Miyajima

Ishikawa

Sekine

et al. 2019

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

“…This provides a fast penetration pathway for gases, liquids, or other deposition precursors to enter the dielectric film, causing electrical characteristics and reliability of the porous low-k dielectrics [10,11]. As a result, for the successful integration of highly porous low-k dielectrics into the BEOL interconnects, pore-stuffing or pore-sealing processing is required as ways of plasma treatment, dielectric capping, or self-assembled monolayers (SAMs) [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

et al. 2019

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Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the highly porous low-k dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-k dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-k dielectric films to ensure better integrity.

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A tensile test for freestanding low-k thin films using a lift-off technique

Wang¹,

Wang

2022

Microelectronic Engineering

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A plasma assisted in situ restoration process for sidewall damaged ULK dielectrics

Cited by 5 publications

References 14 publications

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

A tensile test for freestanding low-k thin films using a lift-off technique

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