11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
DOI: 10.1109/ispsd.1999.764077
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A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier

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“…To overcome this problem, a high-voltage trench sidewall oxide-merged pin/Schottky (TSOX-MPS) rectifier [21,22], as shown in Figure 20 reduce both I RP and Q rr . This hybrid rectifier is actually a junction rectifier with adjacent Schottky regions separated with sidewall spacers.…”
Section: High-voltage Si Trench Rectifiersmentioning
confidence: 99%
“…To overcome this problem, a high-voltage trench sidewall oxide-merged pin/Schottky (TSOX-MPS) rectifier [21,22], as shown in Figure 20 reduce both I RP and Q rr . This hybrid rectifier is actually a junction rectifier with adjacent Schottky regions separated with sidewall spacers.…”
Section: High-voltage Si Trench Rectifiersmentioning
confidence: 99%