A physics-based MOSFET noise model for circuit simulators

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

“…Mathematically, given that a trap tr is empty (filled) at time t, the probability that it changes state to become filled (empty), within a short time interval dt, is given by λ c,tr (t)dt (λ e,tr (t)dt), where λ c,tr (t) (λ e,tr (t)) is called the capture (emission) propensity of the trap tr at time t. 5 Physics-based models are available for the bias-dependent capture and emission propensities [2], [8], [20].…”

Ultra Low Noise CMOS Image Sensors

“…It relates the 1/ f noise in MOS transistors to a process of generation-recombination between the carriers in the conduction band of the MOS channel and the traps located at the silicon oxide layer. A long debate lasted for years between the two schools of thought while other works tried to present theories reconciliating both models [72,73]. Random telegraph signal (RTS) noise is the name commonly used to designate the fluctuations resulting from the process of capture and release of carriers by a single trap.…”

“…The derivation of the drain current noise associated with these variations is performed by relating the drain current variation to the channel carriers mobility and number fluctuation. Both the Berkeley Shortchannel IGFET Model (BSIM), and EKV [72,67] formalisms lead to equivalent gate referred …”

A Study Of Flicker Noise In MOS Transistor Under Switched Bias Condition

“…The deduction of the PSD of RTS can be calculated as in [6] but for a single trap. The result is a Lorentzian spectrum, flat for lower frequencies and decaying with 40dB per decade starting at the frequency f c : We shall denote τ c as the mean time before an electron is captured by the trap and τ e as the mean time before it is emitted.…”

“…Integrating [6] in the z coordinate and in the energy: [7] Note that the integration boundaries in [7] are E C , E V (valence and conduction band energy) instead of ∞ ± . This classical approximation is supported by the fact that the product ) 1 (…”