A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs

Beloufa, Abbès; Bouguenna, Driss; Kermas, N.; As, D. J.

doi:10.1007/s11664-019-07927-8

Cited by 5 publications

(2 citation statements)

References 19 publications

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“…In Fig. 6 the capacitance is varying gradually with an increase in drain voltage, when the device becomes saturated, so that the drain voltage can affect the charge in the channel [2].…”

Section: Resultsmentioning

confidence: 99%

Performance analysis of III-nitride materials based biosensors for detection of albumin protein

Abdellah,

Driss,

Amine

2023

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In this work, AlGaN metal-oxide-semiconductor highelectron-mobility transistor (MOS-HEMT) based biosensor has been presented for detecting the albumin protein. The simulation results of the sensitivity parameters used to detect albumin protein such as drain current, transconductance, output conductance, gate-todrain capacitance, and sensitivity have been obtained with atlas-technology computer aided design (Atlas-TCAD). The AlGaN/GaN MOS-HEMT device is optimized, in require to improve the biosensor sensitivity. The sensitivity obtained is 55.81%.

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“…In Fig. 6 the capacitance is varying gradually with an increase in drain voltage, when the device becomes saturated, so that the drain voltage can affect the charge in the channel [2].…”

Section: Resultsmentioning

confidence: 99%

Performance analysis of III-nitride materials based biosensors for detection of albumin protein

Abdellah,

Driss,

Amine

2023

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“…TABLE I: Constant terms obtain from integration (25) with reference to [23], [35] Constant Expression…”

Section: B 2-deg Sheet Charge Carrier Density Modelmentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

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In this paper we have developed an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cut-off frequency(f T ) model equations are generated and simulated with MATLAB tool. It is also observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can also improve the device performance. The proposed Ferro PZT MOSHEMT model accurately produces a higher drain current of 1.14A/mm , a high transconductance of 362S/mm, the gate-to-source capacitance of 50.99pF, the gate-to-drain capacitance of 38.25pF, and high cut-off frequency of 0.033THz for 20nm AlGaN barrier layer. The proposed model results show good agreement with the TCAD-Atlas simulation results and were satisfactory for the different AlGaN barrier layer thickness. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.

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Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment

Mishra,

Khan,

Jena

et al. 2024

Microsyst Technol

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A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs

Cited by 5 publications

References 19 publications

Performance analysis of III-nitride materials based biosensors for detection of albumin protein

Performance analysis of III-nitride materials based biosensors for detection of albumin protein

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment

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