A physics-based compact device model for GaN HEMT power devices

Kotecha, Ramchandra; Zhang, Yuzhi; Rashid, Arman Ur; Vrotsos, Tom; Mantooth, H. Alan

doi:10.1109/wipda.2016.7799919

Cited by 13 publications

(7 citation statements)

References 8 publications

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“…In the above equation, W g is the width of the gate, v d is the carrier drift velocity and n s is the sheet charge density in the channel. Since it is a lateral HEMT device, the x-direction is considered to be the lateral direction for the current conduction [12]- [14], [35]. The well-known solution to Schrödinger's and Poisson's equations gives the charge sheet density of the 2DEG in the potential well.…”

Section: A DC Model Formulationmentioning

confidence: 99%

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Kotecha

Hossain

Rashid

et al. 2021

IEEE Open J. Power Electron.

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This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications. The model has been validated against the measured characteristics of a 650 V commercially available GaN device. The higher voltage range devices exhibit quasi-saturation on-state behavior due to drift resistance, which is evident from their on-state behavior. Also, higher voltage GaN devices have significant nonlinear capacitance characteristics due to the presence of field plates connected to the source and gate terminals. The field plates are fabricated to improve the electric-field distribution in the channel. The field plates result in significant nonlinearity in the channel capacitance that can be quantified as successive depletion in the device capacitances. The model accurately captures these phenomena in the dc and C-V device characteristics. The model also captures the third-quadrant behavior of all GaN devices with model parameters that are decoupled from the first quadrant while maintaining continuity between the first and third quadrants. Dynamic validation of the model is performed from the double-pulse test. The proposed model can be used to characterize commercially available high-voltage GaN devices that can be used in power electronic applications and design.INDEX TERMS Circuit simulations, compact modeling, device characterization, gallium nitride, power electronics, power semiconductor devices, wide bandgap semiconductors.

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Section: A DC Model Formulationmentioning

confidence: 99%

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Kotecha

Hossain

Rashid

et al. 2021

IEEE Open J. Power Electron.

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“…In [10, 11], a review of SiC MOSFET models presented in literature is presented. The physical numerical models in [12, 13], which based on the carrier drift‐diffusion motion equations, are always too complex to be implemented in circuit simulations. Behavioural model, which is adopted in circuit simulations, is an effective way for circuit simulation [14, 15].…”

Section: Introductionmentioning

confidence: 99%

Model parameter calibration method of SiC power MOSFETs behavioural model

Yang

Gao

2020

IET Power Electronics

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To accurately estimate the switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field effect transistor, simulating with the behavioural model is a common approach. However, due to different manufacture batches, processes and application conditions, the model parameters need to be calibrated after being extracted from the datasheet. To improve the transient precision of behavioural model for SiC power MOSFET and provide technicians with more realistic and accurate simulation results, in this study, a calibration method for the behavioural model parameter is proposed by analysing the sensitivity of the parameters on the switching characteristics. The analysis shows that the sensitivity of the parameters affecting the SiC MOSFET behaviour model in sequence are C gd , C gs , V th , R g,int , g f , L d , L S , C ds and C Dj. Using this sensitivity influence order, the corresponding model parameters can be corrected by observing the deviations between the experimental and simulation waveforms. Finally, double pulse tests were carried out and the comparison results indeed verify its accuracy under different working conditions. The proposed method is verified by Saber simulation software, and it can also be applied to other simulation software.

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“…Although Silicon (SI) -based switching devices have been used in all industries, they have been replaced by the growth of wide bandgap (WBG) semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Many power converters using WBG devices with different characteristics from conventional Si-based devices have been studied [13][14][15][16][17]. WBG devices have higher blocking voltage, higher switching frequency, higher thermal conductivity, and lower on-state loss than Sibased devices [14,18].…”

Section: Introductionmentioning

confidence: 99%

“…Many power converters using WBG devices with different characteristics from conventional Si-based devices have been studied [13][14][15][16][17]. WBG devices have higher blocking voltage, higher switching frequency, higher thermal conductivity, and lower on-state loss than Si-based devices [14,18]. Therefore, the power density can be increased by using WBG devices.Other studies on improving the power density of H-bridge inverters have been conducted on asymmetric inverters with different switching leg topologies [19][20][21][22].…”

mentioning

confidence: 99%

Hybrid PWM Strategy for Power Efficiency Improvement of 5-Level TNPC Inverter and Current Distortion Compensation Method

Lee

Cho

2019

Electronics

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This paper proposes a pulse width modulation (PWM) strategy for improving the efficiency of a 5-level H-bridge T-type neutral point clamped (TNPC) inverter. In the case of the proposed PWM strategy, unlike the conventional PWM strategy in which both of the switching legs of the H-bridge inverter operate at a high frequency, one switching leg of the inverter operates at a low frequency. As the switching frequency is lowered, the switching loss is reduced, this improving the efficiency of the system. The duty references for the switching legs and the operating principle of the inverter are described in detail. The proposed PWM strategy, however, causes distortion of the output filter inductor current. The cause of the distortion has been analyzed and a compensation method is proposed to mitigate the distortion of the current. The effect of the proposed PWM strategy can be predicted through the loss calculation of the inverter for each modulation strategy. Furthermore, current distortion mitigation obtained by compensation method is confirmed through the simulation. In order to verify the effectiveness of the proposed strategy, a 2 kW H-bridge TNPC inverter prototype is implemented and tested. The simulation and experimental results show that the efficiency of the inverter is improved when the proposed PWM strategy is applied.

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A physics-based compact device model for GaN HEMT power devices

Cited by 13 publications

References 8 publications

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Model parameter calibration method of SiC power MOSFETs behavioural model

Hybrid PWM Strategy for Power Efficiency Improvement of 5-Level TNPC Inverter and Current Distortion Compensation Method

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