A physical model of switching dynamics in tantalum oxide memristive devices

Abstract

We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

“…Similar concepts such as bistable switching and voltage-controlled resistance phenomenon were also reported in a variety of oxides such as ZnO4, Al 2 O 3 5, TiO 2 6, Nb 2 O 5 78, and tantalum oxide910. Furthermore, this multistate switching phenomenon was also found in perovskite and chemical modified polymer, namely various tunable modes of the electronic conducting states11121314.…”

Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

“…[16,29,31,33,50,80] Depending on the different types of ReRAM cells, nucleation, [27,38,70,[81][82][83] charge transfer [71,84] or ion drift [85] were reported to be rate-limiting. The origin of the rate-limiting step however, cannot be unified because of its dependence on the nature of the solid electrolyte, on the electrode material(s) and on the thermodynamic factors.…”

A comprehensive approach to decipher biological computation to achieve next generation high-performance exascale computing.

“…Our next effort is a theoretical study in collaboration with Dept. 1748 and Hewlett Packard on tantalum oxide based memristors and the impact of the filament geometry on the switching dynamics [29]. This study also includes experimental data on HP-fabricated devices that comports with our theoretical model of oxygen vacancy flux within devices.…”

“…This work was published in Applied Physics Letters in 2013 and the article material is included here [29]. Memristive systems, which display hysteretic I-V relationships based on tunable internal state variables, were originally observed and predicted as many as 40 years ago [58,60,61,79], but have recently become a field of intense research [52,55,56,77].…”