Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

Li, Linglong; Lu, Lu; Li, Yanxi; Yao, Yonggang; Zhang, Dawei; Yang, Guang; Yao, Jin; Viehland, Dwight; Yang, Yaodong

doi:10.1038/srep09229

Cited by 10 publications

(7 citation statements)

References 29 publications

(41 reference statements)

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“…The equivalent circuit consists of a rectifier along with a memristor connected in parallel. A similar type of equivalent circuit was proposed in the previous reports [15,16]. The variation of the resistance is also shown in the inset of figure 8(c).…”

Section: Modulations In Carrier Conduction At the Bto/gan Heterojunctionmentioning

confidence: 55%

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Bhat¹,

Pandey²,

Krupanidhi³

2017

J. Phys. D: Appl. Phys.

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We report on the ferroelectric polarization-induced switchable interfacial coupling modulations in BaTiO 3 /GaN heterojunction transport behaviour. The ferroelectric barium titanate, BaTiO 3 (BTO) was integrated with polar semiconductor gallium nitride (GaN). BTO with a tetragonal structure was deposited on a wurtzite (0 0 0 1) epitaxial GaN/c-Al 2 O 3 substrate by pulsed laser deposition, which was further confirmed by x-ray diffraction and Raman spectroscopy. BTO/GaN heterojunctions with resistive switching behaviour exhibited modulations in transport characteristics due to the interfacial coupling. The ferroelectric nature and interfacial coupling effect of this heterojunction was confirmed with the help of piezoresponse force microscopy. A valence band offset of 0.82 eV and conduction band offset of 0.62 eV were obtained for BTO/GaN heterojunctions by x-ray photo-electron spectroscopy. This interfacial coupling phenomenon was analysed and its effect on the carrier conduction in the heterojunction was investigated by band alignment studies.

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Section: Modulations In Carrier Conduction At the Bto/gan Heterojunctionmentioning

confidence: 55%

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Bhat¹,

Pandey²,

Krupanidhi³

2017

J. Phys. D: Appl. Phys.

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“…Very recently, as shown in Figure 1(d), new and novel device architectures, vertically aligned nanostructured (VAN) films, [43][44][45][46][47][48][49][50][51][52][53] were developed to overcome several issues in conventional ionic devices as mentioned above. Basically, the development of ionic devices by using VAN films started from a similar motivation of laterally aligned heteroepitaxy films.…”

Section: New Device Architectures For Ionic Devicesmentioning

confidence: 99%

“…46,51,52 The central image in Figure 3 shows the resistance change in SDC-SrTiO 3 VAN films when an external voltage is applied. When a positive voltage is applied to the as-grown sample, the device resistance changes from low to high values.…”

Section: A Resistive Switching Phenomenamentioning

confidence: 99%

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Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Lee

MacManus‐Driscoll

2017

APL Materials

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This review provides the design principles to develop new nanoionic applications using vertically aligned nanostructured (VAN) thin films, incorporating two phases which self-assemble in one film. Tunable nanoionics has attracted great attention for energy and device applications, such as ion batteries, solid oxide fuel cells, catalysts, memories, and neuromorphic devices. Among many proposed device architectures, VAN films have strong potential for nanoionic applications since they show enhanced ionic conductivity and tunability. Here, we will review the recent progress on state-of-the-art nanoionic applications, which have been realized by using VAN films. In many VAN systems made by the inclusion of an oxygen ionic insulator, it is found that ions flow through the vertical heterointerfaces. The observation is consistent with structural incompatibility at the vertical heteroepitaxial interfaces resulting in oxygen deficiency in one of the phases and hence to oxygen ion conducting pathways. In other VAN systems where one of the phases is an ionic conductor, ions flow much faster within the ionic conducting phase than within the corresponding plain film. The improved ionic conduction coincides with much improved crystallinity in the ionically conducting nanocolumnar phase, induced by use of the VAN structure. Furthermore, for both cases Joule heating effects induced by localized ionic current flow also play a role for enhanced ionic conductivity. Nanocolumn stoichiometry and strain are other important parameters for tuning ionic conductivity in VAN films. Finally, double-layered VAN film architectures are discussed from the perspective of stabilizing VAN structures which would be less stable and hence less perfect when grown on standard substrates.

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“…Moreover, the high-density, memristive-crossbar is also a perfect candidate for neural bio-inspired computing 8 9 10 11 12 . Such applications are driven by recent advances in the fabrication of memristive devices 13 14 15 16 17 18 19 20 .…”

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confidence: 99%

Single-Readout High-Density Memristor Crossbar

Zidan

Omran

Naous

et al. 2016

Sci Rep

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High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer-memory system to address the sneak-paths problem. The proposed methods require a single memory access per pixel for an array readout. Besides, the memristive crossbar consumes an order of magnitude less power than state-of-the-art readout techniques.

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Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

Cited by 10 publications

References 29 publications

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Single-Readout High-Density Memristor Crossbar

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Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

Cited by 10 publications

References 29 publications

Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Single-Readout High-Density Memristor Crossbar

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Product

Resources

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Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices