A Performance Tradeoff Function for Evaluating Suggested Parameters in the Reactive Ion Etching Process

Retnasamy

Hashim

et al. 2014

AMR

This study reports on the preliminary investigations on the effect of Reactive Ion Etch (RIE) parameters on the surface characteristics of Al bond pad. Investigation is done employing Design of Experiment (DOE) method. Quantity of Oxygen, Argon, ICP power and BIAS power were varied to get 16 sets of recipes. This provides 16 samples with different combination of RIE parameters. Surface characteristics of the samples were analyzed using Atomic Force Microscopy (AFM).Data collected were in terms of Surface Roughness (RA), Peak Vs Valley (P-V) and Surface Root-Mean-Square Roughness (RMS). Result shows that combination of these RIE parameters does not vastly affect the surface characteristics of the Al bond pad.

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface Roughness Influence on O<sub>2 </sub>and Ar RIE Gas Treated Aluminum Surface

Retnasamy

Hashim

et al. 2014

AMR

“…This pre-treatment method uses only efficient resources and apparently improves the manufacturability, reliability and yield for advanced semiconductor packages. The removal of the acquired amount of material from substrates will contribute to the improvement of the surface uniformity and indirectly towards device reliability [2]The ability to predict the influence of the process parameters of RIE is crucial in terms of machine performance as they may have a serious impact on product quality as well as on the probability of machine failure [3]. Plasma treatment is used for a wide range of process steps and surface preparation to enhance the adhesion, preplate resist wettability, descumming (removal of resist or polymer residues in vias or openings), resist strip, metal etch, rework and the likes.…”

Section: Introductionmentioning

confidence: 99%

Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology

Palianysamy

Hashim

et al. 2014

AMR

Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and DOE offers a better way to optimize the desired outcome.

“…The ability to predict the influence of the process parameters of RIE is vital in terms of machine performance as they may have a serious impact on product quality as well as on the possibility of machine failure [12]. Plasma treatment is used for a wide range of process steps and surface preparation to enhance the adhesion, preplate resist wettability, descumming (removal of resist or polymer residues in vias or openings), resist strip, metal etch, rework and the likes.…”

Section: Introductionmentioning

confidence: 99%

Aluminium Surface Grain Size Analysis on RIE Treatment

Retnasamy

Fuad

et al. 2013

AMM

Reactive Ion Etch (RIE) has been an important process in the world of microelectronic fabrication. Focus of this preliminary study is on how RIE affects the grain size of aluminum film which is fabricated on substrates. RIE parameters are varied to obtain 16 different recipes which are done using Design of Experiment. Grain size of the samples is recorded for all 16 samples before and after RIE treatment. This produces results that can be compared to obtain the effect of RIE on the aluminum film. Results show that RIE affects the mean grain size of the aluminum film as it increases after RIE treatment.