A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors

Gustafsson, Oscar; Karim, Amir; Asplund, Carl; Wang, Qin; Zabel, T.; Almqvist, Susanne; Savage, Susan; Andersson, Jan Y.; Hammar, Mattias

doi:10.1016/j.infrared.2013.09.009

Cited by 8 publications

(4 citation statements)

References 34 publications

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“…However, it is generally believed that the Ga‐related native defects in GaSb would hinder device performance. To overcome problems associated with Ga‐related defects, an alternative SL material, InAs/InAs y Sb 1− y , has been proposed . Moreover, through changes in the layer thicknesses and variation in the arsenic/antimony (As/Sb) ratio, the band structure can be engineered to meet the requirements of the desired working wavelength.…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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Infrared optoelectronic devices based on type‐II superlattice structures of III–V semiconductor materials have progressed significantly during the past decades. Exploring and further expanding the material space is of great significance for the development of infrared applications. Herein, a superlattice structure based on InAs(Sb)/InxGa1−xAsySb1−y grown using a fractional monolayer alloy process to control the superlattice composition and structure is presented. High‐order satellite peaks with a narrow full width at half maximum (31 arcs) in the X‐ray diffraction patterns indicate the good crystal quality of the superlattices. Transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) analysis validate the fractional monolayer alloy growth method. Photoluminescence measurements and k·p model calculations reveal the superior optical properties of the superlattice (sevenfold higher intensity than that of InAs/GaSb). In addition, the flexible control over the superlattice structure afforded by the method allows miniband engineering to cover the mid‐wavelength and long‐wavelength infrared regions. This work highlights the great potential of InAs(Sb)/InxGa1−xAsySb1−y superlattices in infrared optoelectronic devices.

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Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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“…Metal microstrip arrays have been receiving an increasing attention because of their response-wavelength selectivity based on structure geometry [ 14 , 15 , 16 , 17 ], particularly for IR sensing and imaging applications [ 18 , 19 , 20 , 21 ]. IR detectors utilizing nano-micro metal-array plasmonic metamaterials hybrid with graphene have been demonstrated recently at mid-IR wavelength regime [ 22 , 23 ].…”

Section: Introductionmentioning

confidence: 99%

Time-Resolved FDTD and Experimental FTIR Study of Gold Micropatch Arrays for Wavelength-Selective Mid-Infrared Optical Coupling

Yager

Chikvaidze

et al. 2021

Sensors

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Infrared radiation reflection and transmission of a single layer of gold micropatch two-dimensional arrays, of patch length ∼1.0 μm and width ∼0.2 μm, have been carefully studied by a finite-difference time-domain (FDTD) method, and Fourier-transform infrared spectroscopy (FTIR). Through precision design of the micropatch array structure geometry, we achieve a significantly enhanced reflectance (85%), a substantial diffraction (10%), and a much reduced transmittance (5%) for an array of only 15% surface metal coverage. This results in an efficient far-field optical coupling with promising practical implications for efficient mid-infrared photodetectors. Most importantly we find that the propagating electromagnetic fields are transiently concentrated around the gold micropatch array in a time duration of tens of ns, providing us with a novel efficient near-field optical coupling.

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“…Therefore, new IR pho- * E-mail: hakan.pettersson@hh.se todetector technologies are being explored worldwide for the next generation of IR imaging/sensing systems with higher operating temperatures and lower cost. For example, type I-and type-II quantum-dot photodetectors (QDIPs) and type-II InAs/GaSb-based strained layer superlattice (T2SL) photodetectors are two such promising candidates [2][3][4]. However, achieving the desired cost and performance figure of merits for these IR photodetectors is still challenging.…”

Section: Introductionmentioning

confidence: 99%

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Hussain

Pettersson

Wang

et al. 2018

J. Korean Phys. Soc.

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Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.

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A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors

Cited by 8 publications

References 34 publications

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Time-Resolved FDTD and Experimental FTIR Study of Gold Micropatch Arrays for Wavelength-Selective Mid-Infrared Optical Coupling

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

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A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors

Cited by 8 publications

References 34 publications

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Time-Resolved FDTD and Experimental FTIR Study of Gold Micropatch Arrays for Wavelength-Selective Mid-Infrared Optical Coupling

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

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Product

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Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice