A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses

Quarterman, Adrian H.; Wilcox, Keith G.; Apostolopoulos, Vasilis; Mihoubi, Zakaria; Elsmere, Stephen; Farrer, I.; Ritchie, D. A.; Tropper, A.C.

doi:10.1038/nphoton.2009.216

Cited by 191 publications

(91 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar to DPSSLs, the high-Q cavity results in a very low timing jitter noise of ultrafast VECSEL source [5,6]. Pulse durations as short as 60 fs in pulse bursts [7], or 107 fs with 3 mW average output power in fundamentally modelocked operation [8] were obtained. In the sub-500-fs domain, the power levels reach up to 150 mW [9,10].…”

Section: Introductionmentioning

confidence: 91%

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach

Zaugg¹,

Hoffmann²,

Pallmann³

et al. 2012

Opt. Express

View full text Add to dashboard Cite

Ultrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solidstate lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses. Tropper, "A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses," Nat. Photonics 3(12), 729-731 (2009). 8. P. Klopp, U. Griebner, M. Zorn, and M. Weyers, "Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser," Appl. Phys. Lett. 98(7), 071103 (2011). 9. P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, "290-fs pulses from a semiconductor disk laser," Opt.Express 16 GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power," IEEE J.

show abstract

Section: Introductionmentioning

confidence: 91%

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach

Zaugg¹,

Hoffmann²,

Pallmann³

et al. 2012

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Active-, passiveor colliding-pulse mode-locking techniques 5,6 were the prerequisite for the generation of few picosecond and subpicosecond pulses, considerably impeded due to non-linear phase changes associated with gain saturation 4 . So far, the shortest pulse durations from semiconductor lasers, reaching several tens of femtoseconds, have been demonstrated with optically pumped, passively mode-locked, vertical external-cavity surface emitting lasers (VECSELs) 7 based on wideband semiconductor saturable absorber mirrors 8 .…”

mentioning

confidence: 99%

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers

et al. 2013

View full text Add to dashboard Cite

Ultrafast lasers have a crucial function in many fields of science; however, up to now, highenergy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of B60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

show abstract

“…44 The exact conditions for successful operation of plasmonic saturable absorbers will require extensive modeling which goes beyond our current work.…”

mentioning

confidence: 99%

Photoconductively Loaded Plasmonic Nanoantenna as Building Block for Ultracompact Optical Switches

et al. 2010

View full text Add to dashboard Cite

We propose and explore theoretically a new concept of ultrafast optical switches based on nonlinear plasmonic nanoantennas. The antenna nanoswitch operates on the transition from the capacitive to conductive coupling regimes between two closely spaced metal nanorods. By filling the antenna gap with amorphous silicon, progressive antenna-gap loading is achieved due to variations in the free-carrier density in the semiconductor. Strong modification of the antenna response is observed both in the far-field response and in the local near-field intensity. The large modulation depth, low switching threshold, and potentially ultrafast time response of antenna switches holds promise for applications ranging from integrated nanophotonic circuits to quantum information devices.KEYWORDS Plasmonics, nanoantennas, nanoparticles, ultrafast switches P lasmonics has emerged recently as an extremely promising technological research area, owing to rapid advances in nanofabrication and modeling.1-3 Miniaturized nanoplasmonic devices hold the potential to become one of the key nanotechnologies capable of combining electric and photonic components on the same chip.2 Of special interest for nanoscale control over light are metal nanoantennas, capable of concentrating optical fields into a subwavelength volume. [4][5][6][7] Analogous to their radiowave counterparts, nanoantennas support standing-wave electromagnetic resonances at visible and infrared wavelengths. Nanoantennas of various geometries have been applied successfully in nonlinear optics, 4,5,8,9 nanoscale photodetectors, 10 fluorescence enhancement, 11-14 high-harmonic generation, 15 and single-molecule detection. 16Active control over subwavelength optical fields is of importance for optical communication, sensing, and quantum information technology. In the terahertz range, the conductivity of semiconductors has been used recently to control the transport of terahertz waves using coupling to plasmonic modes on surfaces and nanostructures.17,18 Alloptical control over plasmons in the optical range has recently been demonstrated using planar metal films, 20,21 hole arrays, 22 and waveguided gold gratings. 23 For single small metal nanoparticles, ultrafast heating, and coherent vibrations of the metal particle give rise to broadening and a spectral shift of its plasmon resonances. [24][25][26] These effects are however not large enough for full optical control at the single-particle level for practical pump powers. In this communication, we explore the functionality of plasmonic nanoantennas as novel building blocks for ultracompact nonlinear photonic devices. We propose that the small footprint, large light-matter interaction strength, and fast dynamics of single plasmonic nanoantennas can be used to design a new type of optical switch for controlling both the far-field and near-field distribution of light. Tunability of the antenna by impedance loading of its nanogap using a dielectric medium has recently been described theoretically 27 and experimentally. 28 In th...

show abstract

A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses

Cited by 191 publications

References 10 publications

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers

Photoconductively Loaded Plasmonic Nanoantenna as Building Block for Ultracompact Optical Switches

Contact Info

Product

Resources

About