A p-n Sandwich Structure Peltier Device with a Sharp Microtip for Cooling/Heating Micro-objects

Yamaguchi, S.; Anzai, Toru; Yamamoto, Atsushi

doi:10.1149/1.2839446

Cited by 12 publications

(21 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The properties of Bi 2 Te 3 we used were described in Ref. 26. Because of a complexity, the other terms in Equation 3 were not taken into account.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the response time during Peltier effect also elongated to 2.5 sec, which is comparable to that reported for bulk Bi 2 Te 3 system. 26 Although T S (t) can be reduced largely during Peltier operation, the T S (t) is still more than 70…”

Section: Resultsmentioning

confidence: 99%

“…3,18,23,24 In contrast, a response time for Peltier devices has not been paid an attention to. Even for well-known Bi 2 Te 3 systems, only a few reports on bulk 26 and thin film 27 forms have discussed the response time of Peltier cooling. In addition, the main interests of Si-based Peltier devices have been on solving a power efficiency of cooling devices during a steady state after switching on the Peltier device with at least an order of 10 secs.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Transient Observation of Peltier Effect for PtSi_x-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Furubayashi

Tanehira

Yonemori

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Transient Peltier effect was demonstrated for Al/Pt/PtSi x -coated single crystalline silicon (100) with a size of 10 mm × 10 mm × 0.625 mm sandwiched by a pair of gold blocks with a temperature gradient of 0.5 K. After an operation of Peltier device, maximum temperature decrease of ∼0.3 K was observed until t = 0.5-1.0 sec. Derivation of thermal parameters was performed by using a simple heat equivalent circuit. The derived response times of Peltier component τ P without SiC, approximately 0.1 sec, were much shorter than those reported for bulk Bi 2 Te 3 and other Si-related Peltier coolers. The Seebeck coefficient of the n-Si device in this work was −490 ± 20 μV/K, which is comparable to those reported previously. In addition, the insertion of a 4H-SiC substrate (thickness of 0.35 mm) substantially did not modify the thermal properties of the Si Peltier device. Simple simulation revealed that both high thermal conductance and high Seebeck coefficient are essential in order to minimize an increase of temperature of power devices with a short response time. Therefore, a real Si-based Peltier device integrated on a SiC-based power device would produce an effective heat transport with a sufficiently short response time. All of power devices emit a large amount of heat. For example, power waste of ∼1kW for an inverter corresponds to a heat generation of a few hundred W/cm 2 in a silicon carbide (SiC) power tip with a size of dozens of mm 2 . In addition, because the emitted heat fluctuates by time frequently, the amount of the thermal transport should be controllable in proportion to that relation. This controllable thermal transport allows us to flatten the time dependence of the temperature of SiC power chips, and should help to decrease the size of power modules. Therefore, we adopted Peltier devices for a thermal transport from 4H-SiC-based power devices.In a Peltier device, a flow of carriers enable an active heat transport. During an operation of the Peltier device with a current I P , the thermal flow in it consists of three terms: an active heat transport by Peltier effect, a Joule heat, and a passive thermal diffusion caused by a temperature gradient. If the device consists of n blocks of Peltier semiconductors with its Seebeck coefficient S, the first term is written as n|S|TI P . The value T denotes an average absolute temperature. The third term can be expressed as a product of thermal conductance K P and temperature difference between hot and cold sides ( T), namely,The expression of total thermal flow q all dependents on an application. Figure 1 shows a difference of the application of Peltier devices. Conventional Peltier devices have been applied for cooling systems including refrigerators, as shown in Fig. 1a. In this case, it is required to keep a lower temperature while to make a thermal isolation from the outside at a higher temperature. Because the direction of Peltier effect is opposite to that of thermal diffusion, the total thermal flow is written as q all = n|S|TI P − (1/2)R P I P 2 − K P T...

show abstract

“…The properties of Bi 2 Te 3 we used were described in Ref. 26. Because of a complexity, the other terms in Equation 3 were not taken into account.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Transient Observation of Peltier Effect for PtSi_x-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Furubayashi

Tanehira

Yonemori

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…To overcome this problem, we previously demonstrated that a Peltier device with our proposed structure is effective both for cooling a localized area and for manipulating microobjects and microorganisms by heat. This Peltier device has a structure characterized by a metallic tip directly sandwiched between P-type and N-type thermoelectric materials [18][19][20][21]. The tip of this device can be cooled or heated directly by the Peltier effect (directcurrent-driven), resulting in a high thermal response.…”

mentioning

confidence: 99%

Impact of temperature dependence of resistivity on thermal time constant of direct‐current‐driven Peltier device

Yamaguchi

Anzai

2017

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

We studied the impact of the temperature dependence of electrical resistivity on the thermal time constant of our Peltier device with a sandwich structure, which is composed of N‐type Bi2Se0.37Te2.4 and P‐type Bi0.6Sb1.3Te3 bulks. We demonstrated that the current dependence of the thermal time constant is strongly affected by the temperature dependence of the internal electrical resistance of the device, and we also introduced an expression for the relationship between the thermal time constant and four parameters (heat capacity, Seebeck coefficient, thermal conductance, and thermal gradient of internal electrical resistance) for our Peltier device in terms of current.

show abstract

“…1,2 It can be said that our new Peltier device is the first since the conventional -type structure was fabricated a half-century ago. 3 It should be noted that the copper electrode itself is cooled or heated not by simple thermal conduction but by heat transport due to carriers ͑electrons and holes͒ convection.…”

mentioning

confidence: 99%

Heat micromanipulation of micro-objects and micro-organisms using a novel Peltier device

Anzai

Yamaguchi

2009

J. Micro/Nanolith. MEMS MOEMS

Self Cite

View full text Add to dashboard Cite

A novel thermoelectric cooling/heating device was proposed and fabricated as an alternative to the conventional -type device. The novel device is the first since the conventional -type structure was fabricated a half-century ago. The structure includes a sharp tip that is positioned between p-and n-type Bi 2 Te 3 bulks, and the tip can easily be exchanged when different targets are cooled or heated. The tip sizes are 50-100 m when a copper tip is used and 100 nm when a cantilever is used. The tip temperature reached −36.3°C during cooling and 251.5°C during heating. Our device is useful not only for cooling/heating micro-objects but also for heat manipulation of micro-organisms.

show abstract

A p-n Sandwich Structure Peltier Device with a Sharp Microtip for Cooling/Heating Micro-objects

Cited by 12 publications

References 6 publications

Transient Observation of Peltier Effect for PtSi_x-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Transient Observation of Peltier Effect for PtSi_x-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Impact of temperature dependence of resistivity on thermal time constant of direct‐current‐driven Peltier device

Heat micromanipulation of micro-objects and micro-organisms using a novel Peltier device

Contact Info

Product

Resources

About

A p-n Sandwich Structure Peltier Device with a Sharp Microtip for Cooling/Heating Micro-objects

Cited by 12 publications

References 6 publications

Transient Observation of Peltier Effect for PtSix-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Transient Observation of Peltier Effect for PtSix-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Impact of temperature dependence of resistivity on thermal time constant of direct‐current‐driven Peltier device

Heat micromanipulation of micro-objects and micro-organisms using a novel Peltier device

Contact Info

Product

Resources

About

Transient Observation of Peltier Effect for PtSi_x-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Transient Observation of Peltier Effect for PtSi_x-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices