Impact of temperature dependence of resistivity on thermal time constant of direct‐current‐driven Peltier device

Abstract

We studied the impact of the temperature dependence of electrical resistivity on the thermal time constant of our Peltier device with a sandwich structure, which is composed of N‐type Bi2Se0.37Te2.4 and P‐type Bi0.6Sb1.3Te3 bulks. We demonstrated that the current dependence of the thermal time constant is strongly affected by the temperature dependence of the internal electrical resistance of the device, and we also introduced an expression for the relationship between the thermal time constant and four parameters (heat capacity, Seebeck coefficient, thermal conductance, and thermal gradient of internal electrical resistance) for our Peltier device in terms of current.

Mechanical properties and cohesive energies of BiSeTe and BiSbTe

“…In fact, they have thus far been intensively studied for use in thermoelectric power generation (Seebeck effect) and thermoelectric cooling (Peltier effect) devices. [1][2][3][4][5][6][7][8] To achieve high performance in their application, knowledge of their fundamental properties is essential. In particular, the linear thermal expansion coefficient is important for developing robust power generation and cooling devices.…”

Intelligent Modeling and Design of a Novel Temperature Control System for a Cantilever-Based Gas-Sensitive Material Analyzer

“…With the development of semiconductor refrigeration technology, temperature control devices based on thermoelectric Peltier coolers have been increasingly used in applications such as MEMS devices [8], medical instruments [9], optical experiments [10], and microscope-sample temperature control [11]. This paper describes the development of a Peltier temperature control device for a microcantilever-based analyzer that can characterize gas-sensitive materials.…”